DMN5L06K-7 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 5V
Rds On (Max) @ Id, Vgs:	2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
FET Feature:	--
Power Dissipation (Max):	350mW (Ta)
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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DMN5L06K-7 Application Field and Working Principle

DMN5L06K-7 is a MOSFET transistor that is used for power switching applications, including audio amplifiers, motor drivers, digital-to-analog converters, and switching converters. The DMN5L06K-7 is a compact, cost-effective and easy-to-use transistor that delivers great performance in all types of power switching applications.The DMN5L06K-7 is a single N-channel MOSFET. It is available in two different packages, including a TO-252-3L and a PowerPAK SO-8L. The DMN5L06K-7 has a high current rating, with a maximum current handling of 14 A and an on-state drain current of 9.59 A. It is designed to handle high switching frequencies up to 1 MHz.The DMN5L06K-7 has a low threshold voltage of 2.7V, which makes it suitable for low-voltage applications. Its low on-state resistance of 0.1 Ohm ensures it can deliver high-efficiency power switching. The DMN5L06K-7 has a maximum operating temperature of 175°C and a maximum junction temperature of 200°C.The DMN5L06K-7 works by using the principle of a field effect transistor (FET), which is a type of transistor that relies on the concept of a semiconductor channel between the source and drain. The MOSFET can act as a current limiting device that is able to regulate currents by controlling the resistance of the channel. The resistance of the channel is controlled by an electric field generated by a gate voltage applied to the gate terminal of the MOSFET.When the gate voltage is low, the resistance of the channel is high. This results in a low current in the channel, allowing lower current to be drawn from the source terminal. As the gate voltage is increased, the resistance of the channel decreases and more current can flow through the MOSFET. This makes the MOSFET an effective current switch that can be used in power switching applications.The DMN5L06K-7 is an excellent choice for a wide range of power switching applications. It provides high efficiency, a high current rating, a low threshold voltage, and a low on-state resistance, allowing it to handle high switching frequencies with ease. Its small size and cost-effectiveness make it an attractive choice for applications that require power switching.

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