DMN5L06DMK-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMN5L06DMKDITR-ND |
Manufacturer Part#: |
DMN5L06DMK-7 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 50V 0.305A SOT-26 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 305mA 400mW Su... |
DataSheet: | DMN5L06DMK-7 Datasheet/PDF |
Quantity: | 18000 |
3000 +: | $ 0.10107 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 305mA |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 400mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Base Part Number: | DMN5L06DMK |
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The DMN5L06DMK-7 is a powerful array of N-channel MOSFETs (metal-oxide-semiconductor field-effect transistors) created by an advanced manufacturing process. It is widely used in a variety of industrial and automotive applications. This article will discuss the DMN5L06DMK-7\'s application field and working principle.
The DMN5L06DMK-7 array of N-channel MOSFETs are mainly used as a switching device in applications where fast switching is required. The array features an array of 8 N-channel MOSFETs in a very small footprint and has a maximum VDS rating of 500V and a maximum RDS (on) rating of 15mΩ. This makes the DMN5L06DMK-7 highly suitable for use in applications with high currents and high power requirements such as power switches, electric motors, and audio amplifiers.
The working principle of the DMN5L06DMK-7 array is based on the operation of the MOSFET. MOSFETs are three-terminal devices, consisting of a gate, a source and a drain. These three terminals all interact with each other, depending on the gate voltage and drain voltage. By applying a voltage to the gate terminal, the current flowing between the source and drain terminals can be regulated. This makes MOSFETs an ideal choice for a wide variety of switching applications.
The DMN5L06DMK-7 array features a built-in ESD punch-through protection section, making it resistant to high-voltage electric shocks. Additionally, the on-resistance of the device can be adjusted by the gate voltage, allowing for precise control of the current flow. The combination of its fast switching and ESD protection makes it highly suited to use in automotive and other applications where a high-level of reliability is required.
Interestingly, the DMN5L06DMK-7 array also features a low-noise, low-distortion design for audio applications. This enables it to be used in systems requiring superior audio quality. In addition, the DMN5L06DMK-7 also comes with a built-in temperature monitoring circuit, allowing for the temperature of the device to be monitored and controlled.
In conclusion, the DMN5L06DMK-7 is a powerful array of N-channel MOSFETs that is widely used in a variety of industrial and automotive applications. Its fast switching and ESD protection make it highly suitable for use in applications with high currents and high power requirements. Additionally, its low-noise, low-distortion design makes it suitable for use in audio applications. Finally, the temperature monitoring circuit ensures a higher level of safety by allowing the device to be monitored and controlled.
The specific data is subject to PDF, and the above content is for reference
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