DMN53D0LDW-7 Discrete Semiconductor Products

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DMN53D0LDW-7 is a three-channel N-channel Logic Level Enhancement-Mode Power Field-Effect Transistor (FET) Array that shows excellent performance in various applications. The product has two independent N-channel enhancement-mode vertical DMOS FETs in each package. The DMN53D0LDW-7 is a great choice for power management in industrial and commercial applications.

The working principle of the DMN53D0LDW-7 is based on field-effect transistors (FETs). It is an electronic device made up of three-dimensional crystal structures, consisting of four different layers. The FETs works on the principle of controlling the flow of current between the drain and source terminals. The gate terminal is used to control the flow of current between the two terminals. When the gate terminal is given positive input, the current flows from the source to the drain by creating an electric field around the channel in between source and the drain.

The DMN53D0LDW-7 consists of two independent N-channel enhancement-mode vertical DMOS FETs in each package. The A-FET is rated as a Logic Level Enhancement-Mode Power FET with an RDSON of 18 mΩ and a maximum drain current of 3.5A. Its gate threshold voltage is 2V, and its gate-source breakdown voltage (VGS) is -25V. The second channel (G-FET) is rated as a Normal-Mode Logic Level FET with an RDSON of 16mΩ and a maximum drain current of 1.7A. Its gate threshold voltage is 2V, and its gate-source breakdown voltage (VGS) is -20V. The product also includes a Neodymium-Iron-Boron magnetically coupled gate terminal.

The DMN53D0LDW-7 has a wide range of application fields, such as industrial and commercial power management, motor control, inverters, and drives. It is especially suitable for applications that require wide operational temperature ranges and provide high efficiency. The product is suitable for high-end motor control in industrial applications and can be used for motor commutation in 600V drives and related protection systems.

In addition, the DMN53D0LDW-7 can also be used in isolated DC/DC converters and power supplies. The device provides high efficiency and reduced cost through increased power density. It enables systems to be designed with fewer components and lower power consumption. The DMN53D0LDW-7 is also suitable for SMPS (switched-mode power supplies), LED lighting, and automotive applications.

In conclusion, the DMN53D0LDW-7 is a three-channel N-channel Logic Level Enhancement-Mode Power Field-Effect Transistor (FET) Array that is suitable for a wide range of applications. Its working principle is based on the principle of controlling the flow of current between the drain and source terminals by a gate terminal. The product is suitable for a variety of industrial and commercial applications, such as motor control, inverters, drives, and power supplies.

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