DMN53D0LDW-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMN53D0LDW-13DITR-ND |
Manufacturer Part#: |
DMN53D0LDW-13 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 50V 0.36A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 360mA 310mW Su... |
DataSheet: | DMN53D0LDW-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03547 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 360mA |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 46pF @ 25V |
Power - Max: | 310mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMN53D0LDW-13 is a Dual P-Channel Mosfet Array, manufactured by Diodes Incorporated. Its small size and high power capabilities make it suitable for a range of applications, from power switching to multiple analog and digital functions. The DMN53D0LDW-13 is a versatile and low-cost solution for those seeking a efficient way to control power in their application.
The DMN53D0LDW-13 includes two P-channel Mosfets operating in a 2x1 configuration, with a single channel input that can support up to 3A of continuous current. Additionally, the DMN53D0LDW-13 features an integral Schottky diode for protection against back-EMF voltage spikes. This feature helps increase device reliability and reduce the number of external components needed in a design.
The DMN53D0LDW-13 is designed for a wide variety of applications that require the control of external power, from automotive applications to DC transmission and conversion. It is particularly useful for controlling power switching in motor control systems, graphics cards and audio amplifiers. Additionally, the DMN53D0LDW-13 can provide enhanced functions such as over-voltage and over-current protection, as well as reliable operation at high frequencies.
The DMN53D0LDW-13 works according to the principle of voltage transfer. In this arrangement, the Gate voltage of the Mosfet is raised or lowered to control the current flow through the Drain. This change in Gate voltage creates a voltage and current shift at the source and drain respectively. The magnitude of the voltage shift is determined by the resistance of the Mosfet, while the magnitude of the current shift is determined by the capacitance at the drain.
The DMN53D0LDW-13 can be used in a variety of applications and can easily be configured to suit the requirements of the user. It is an ideal choice for those seeking an efficient, low-cost way to control power in their application. The device offers robust features, excellent reliability and is easy to implement. Its combination of features make it a great solution for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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