DMN53D0LDW-13 Allicdata Electronics

DMN53D0LDW-13 Discrete Semiconductor Products

Allicdata Part #:

DMN53D0LDW-13DITR-ND

Manufacturer Part#:

DMN53D0LDW-13

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 50V 0.36A SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 50V 360mA 310mW Su...
DataSheet: DMN53D0LDW-13 datasheetDMN53D0LDW-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03547
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The DMN53D0LDW-13 is a Dual P-Channel Mosfet Array, manufactured by Diodes Incorporated. Its small size and high power capabilities make it suitable for a range of applications, from power switching to multiple analog and digital functions. The DMN53D0LDW-13 is a versatile and low-cost solution for those seeking a efficient way to control power in their application.

The DMN53D0LDW-13 includes two P-channel Mosfets operating in a 2x1 configuration, with a single channel input that can support up to 3A of continuous current. Additionally, the DMN53D0LDW-13 features an integral Schottky diode for protection against back-EMF voltage spikes. This feature helps increase device reliability and reduce the number of external components needed in a design.

The DMN53D0LDW-13 is designed for a wide variety of applications that require the control of external power, from automotive applications to DC transmission and conversion. It is particularly useful for controlling power switching in motor control systems, graphics cards and audio amplifiers. Additionally, the DMN53D0LDW-13 can provide enhanced functions such as over-voltage and over-current protection, as well as reliable operation at high frequencies.

The DMN53D0LDW-13 works according to the principle of voltage transfer. In this arrangement, the Gate voltage of the Mosfet is raised or lowered to control the current flow through the Drain. This change in Gate voltage creates a voltage and current shift at the source and drain respectively. The magnitude of the voltage shift is determined by the resistance of the Mosfet, while the magnitude of the current shift is determined by the capacitance at the drain.

The DMN53D0LDW-13 can be used in a variety of applications and can easily be configured to suit the requirements of the user. It is an ideal choice for those seeking an efficient, low-cost way to control power in their application. The device offers robust features, excellent reliability and is easy to implement. Its combination of features make it a great solution for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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