DMN5L06WK-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMN5L06WKDITR-ND |
Manufacturer Part#: |
DMN5L06WK-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 50V 300MA SC70-3 |
More Detail: | N-Channel 50V 300mA (Ta) 250mW (Ta) Surface Mount ... |
DataSheet: | DMN5L06WK-7 Datasheet/PDF |
Quantity: | 39000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 5V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 250mW (Ta) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
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Introduction
DMN5L06WK-7 transistors are widely used in many electronic devices due to their small size, low power consumption and high speed. This device is an N-Channel enhancement mode MOSFET, which is a type of Field-Effect Transistor (FET). It is specifically designed with a power MOSFET which features an integrated, high-voltage gate-source resistor and a proprietary, low-voltage body diode.
Application Field
The DMN5L06WK-7 is ideal for power management, audio and communications applications. This device is best suited for general purpose applications where a low on-resistance and large output current capability is desired. It can be used in high-speed switching circuits, where the switching frequency is up to several megahertz. Additionally, the device is well suited for use in speed and logic circuits, load switches, and voltage regulators.
This device is most commonly used in applications that require low power dissipation and high current density. Examples of applications where the DMN5L06WK-7 device can be used include applications such as radio frequency (RF) amplifiers, power converters, DC-DC converters, DC-AC inverters, as well as motor drives, lighting, LCD displays, and power management systems.
Working Principle
The DMN5L06WK-7 is a metal oxide semiconductor field effect device composed of a source, a drain and a body. It is designed to be operated in an enhancement mode, meaning that it needs an external trigger to turn on a conducting channel between the source and the drain. This is achieved by applying a voltage that is higher than the threshold voltage between the gate and the source. The voltage between the gate and source will also determine the current flowing through the channel.
The drain-source current is mainly controlled by the gate-source voltage. This voltage is applied through the input pin of the DMN5L06WK-7 and it helps control the current flowing between the drain and the source. It can be either positive voltage or negative voltage, with the gate-drain voltage being applied between the drain and the gate. The difference between these two voltages is called the voltage drop or channel resistance.
The device can handle a maximum drain current of 28A and its recommended operating temperature range is from -55°C to 150°C. The temperature in the environment should be considered too, as it can lead to a decrease in the device’s threshold voltage. Furthermore, the device has an ESD protection of at least 8kV and its maximum voltage on any pin can be up to 600V.
Conclusion
The DMN5L06WK-7 is a N-channel Enhancement Mode MOSFET transistor designed for use in power management, audio and communications applications. It is ideal for general purpose applications due to its low on-resistance and large output current capability. It is controlled by the gate-source voltage and has a drain-source current of up to 28A. Furthermore, it has an ESD protection of 8kV and its recommended operating temperature range is between -55°C and 150°C.
The specific data is subject to PDF, and the above content is for reference
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