Allicdata Part #: | DMN5L06VKQ-7-ND |
Manufacturer Part#: |
DMN5L06VKQ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CH 50V 280MA SOT563 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 280mA (Ta) 250... |
DataSheet: | DMN5L06VKQ-7 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Power - Max: | 250mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Description
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A transistor is a three-terminal electronic device that controls the flow of current or voltage between two or more terminals. A Field Effect Transistor (FET) is a three-terminal active device in which current is controlled by a field effect. DMN5L06VKQ-7 is an array of N-Channel DMN5L06VKQ-7 FETs integrated into a single package. It is fabricated using advanced Power DG-MOS technology and is designed for low gate charge and low curve resistance.DMN5L06VKQ-7 has a wide range of applications in electronic systems. It is mainly used for DC to DC conversion, as an active switch in power supply systems, as an amplifier or switch in audio, communications and computer equipment, in motor controls, in robotics and in other high-powered circuits, especially in high-current DC applications. It is also widely used in solar power applications, such as solar cells and other photovoltaic systems. The DMN5L06VKQ-7 FETs have a variety of features and characteristics that make them well suited for a wide range of applications. One of the key features is their low on-resistances, which is what makes them ideal for high current applications. The package also features low input capacitance, low RDSon, and a low threshold voltage. The working principle of a DMN5L06VKQ-7 FET array is based on how it operates when it is connected to a power source. When the source voltage is applied to the gate terminal, an electric field is created, which causes electrons to be attracted and repelled from the junction region. This causes the resistance between the source and the drain terminals to be reduced, allowing current to flow. The resistance between the source and the drain terminals is what determines the amount of current that can flow through the device.The DMN5L06VKQ-7 is a versatile FET array that is used in a wide range of applications. Its ability to handle high current, low input capacitance, and low RDSon make it a great choice for a wide range of applications. Its low threshold voltage allows it to be used in a variety of circuits, including powering solar cells and other photovoltaic systems.The specific data is subject to PDF, and the above content is for reference
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