DMN53D0U-13

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With the development of science and technology and the innovation of industrial products, the application field of transistors is constantly expanding. DMN53D0U-13 is a logic-level N-channel enhancement-mode MOSFET device and the most popular MOSFET of the DMN family. It is designed to have low gate charge and low gate-drain Miller Charge, and it is suitable for applications that require extremely low gate drive and low on-state resistance.

Application Field

DMN53D0U-13 can be used in a wide range of fields, such as IGBT gate drive, voltage level shifting, signal conditioning, battery protection, level shifter, input buffer, DC-DC converter, multiple switch networks, high-side switch and embedded communication interface. Moreover, it can also be used for driving various kinds of electromagnetic coils, relays, contactors, servo motors, solenoid coils, shift registers, and EMI filters.

Working Principle

MOSFETs (metal-oxide-semiconductor field-effect transistors) are voltage-controlled device which relies on semiconductor materials from a variety of sources to achieve their functions. It uses all-semiconductor material and high integration semiconductor to form a signal control gate. The gate is like a valve, which can control the flow of currents. In the DMN53D0U-13, electrons in the N-channel pass the gate when a positive voltage is applied to the gate, allowing the current to flow. It closes when there is no gate voltage. With the characteristics of high input impedance, voltage control and low driving voltage, DMN53D0U-13 can be used to control and regulate the flow of current in the circuit.

Other Characteristics

DMN53D0U-13 has a very low gate-transconductance, ≤ 4.2 mA/mm for VDS > 2.5V. It can avoid excessive power consumption and provides stable operation. The device features very low RDS(ON), ≤ 4.7 mΩ for VGS = 10V, which is conducive to reducing the conduction loss in the circuit. In addition, DMN53D0U-13 also has very low Coss, ≤ 11pF for VGS = 10V, so it can minimize input capacitance. The typical thermal resistance of DMN53D0U-13 is 3.5°C/W, which is suitable for the application in cooling environment.

Conclusion

In conclusion, DMN53D0U-13 is a logic-level N-channel enhancement-mode MOSFET device and a very versatile one. It is used in a variety of applications from IGBT gate drive and voltage level shifting to multiple switch networks. Its low gate charge, low on-state resistance and low gate-drain Miller Charge make it an ideal choice for most applications. Moreover, its low RDS(ON) and low Coss help reduce power consumption and reduce input capacitance, respectively. Therefore, DMN53D0U-13 is a great choice for most of the power switching applications.

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