DMN53D0L-13 Allicdata Electronics
Allicdata Part #:

DMN53D0L-13DI-ND

Manufacturer Part#:

DMN53D0L-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 50V 0.5A SOT23
More Detail: N-Channel 50V 500mA (Ta) 370mW (Ta) Surface Mount ...
DataSheet: DMN53D0L-13 datasheetDMN53D0L-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
FET Feature: --
Power Dissipation (Max): 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The DMN53D0L-13 is one of the most widely used field effect transistors (FET). It has excellent electrical properties, making it suitable for a wide variety of applications. This article will discuss the application field and working principle of the DMN53D0L-13.

The DMN53D0L-13 is a single n-channel enhancement mode FET (E-FET). It is a type of transistor that controls current flow using an electric field. It works by using a gate voltage to alter the current flowing through its drain and source terminals. When the gate voltage is increased, the current flow increases. The DMN53D0L-13 is an E-FET because it has a biasing configuration that enables current flow even when the gate is not energized.

The DMN53D0L-13 is suitable for use in a number of different application fields. It is most commonly used in switching circuits, amplifiers, and power supplies. It is also used in many industrial applications, such as motor drivers, actuators, and even in medical devices.

The DMN53D0L-13 has a maximum drain current of 28A and a voltage rating of 100V. It has a maximum power dissipation of 160W and an input capacitance of 150 pF. It has a maximum output capacitance of 620 pF and an on-state resistance of 4 ohms.

In terms of its working principle, the DMN53D0L-13 operates as a voltage-controlled device. That is, when a voltage is applied to its gate, the drain and source terminals then conduct current only if the voltage applied is larger than the threshold voltage. This is known as the enhancement mode.

The working of this device begins with the application of a gate voltage. This gate voltage controls the current flow through the drain and source by changing the width of the channel between them. When the gate voltage is increased, the drain and source conduction increases, and when it is reduced, the current flow decreases.

The DMN53D0L-13 is also able to operate in reverse. This is known as the depletion mode, where a negative gate voltage is applied and the FET will then start to conduct current unless the applied voltage is below the threshold voltage. This is useful in applications where the same device needs to be used for both switching and blocking applications.

The DMN53D0L-13 has excellent electrical characteristics and is suitable for a wide variety of applications. It is a fast and reliable device, making it ideal for use in a number of different applications. Its use in switching and amplifying circuits, power supplies, motor drivers, and even medical applications makes it an incredibly versatile device.

The specific data is subject to PDF, and the above content is for reference

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