DMP2035UVT-7

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSOT-26
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	23.1nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	35 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMP2035UVT-7 is a single N-Channel enhancement mode power MOSFET which comes in 8-Lead MSOPUltra-Small-Footprint (USP) package. It has been designed specifically tosatisfy the space constrained requirements of the current power switchingapplications.The DMP2035UVT-7 is a part of Vishay’s 2035 family which includes a wide range of N-channel MOSFETs in various voltage ranges from 20-100V and different Drain-Source on-resistance from 0.9-30Ω, making it suitable for many different types of applications. The DMP2035UVT-7 device provides low RDS(ON) and fast switching speeds which make them ideal for high power switching andactuation applications.The device can operate with high Gate-Source voltages up to ±20V which provides maximum MOSFET performance and longterm high temperature robustness and reliability. The DMP2035UVT-7 also has very low gate charge making it desirable for automotive and other applications where power efficiency is paramount.The device also has an operational temperature range of -55℃ to 175℃, allowing it to be used in a variety of high temperature applications. Another advantage of theDMP2035UVT-7 is its ability to switch several thousand volts of drain to source voltage under controlled conduction. This is useful in applications such as electricvehicles and high power inverters, where reliable switching applications need to be engineered.Working PrincipleThe working principle of the DMP2035UVT-7 MOSFET is based on the principle of the MOSFET which operates using an insulated gate. As the voltage between the Gate andSource (VGS) increases, electrons in the channel band from the Source to the Drain can be attracted towards the Gate electrode. As the electrons are attracted towards the Gate, a current (i.e. channel current) will flow from theSource to the Drain. This leads to the conduction of electric current from the Source to the Drain.The DMP2035UVT-7MOSFET is designed for low RDS(ON) which allows for better power performance and energy efficiency. The device’s lowQg and fast switching speed allows for higher power density, faster switching speeds and reduced switching losses which further enhances the device’s performance.Application FieldThe wide range of voltage and drain to source on-resistance make theDMP2035UVT-7MOSFET suitable for a wide range of applications. These include, butare not limited to:· Mobile phone and tablet power management and switching· Automotive power management switches· High power and high voltage inverters· High power switching applications· General purpose switching and driving applicationsIn addition, with its fast switching speed, low RDS(ON), and low Qg, theDMP2035UVT-7 MOSFET is also suitable for applications that require high power density, low thermal losses and reduced EMI (electromagnetic interference). This makes it an idealchoice for applications such as motor drives, induction motor management andcontrol, solar inverters and wind turbines.ConclusionThe DMP2035UVT-7 is a single N-Channel enhancement mode power MOSFET which comes in 8-Lead MSOP Ultra-Small-Footprint package. It is suitable for a wide range of applications such as mobile phones and tablets, automotive power management switches, high power and high voltage inverters, etc. The low Qg and fast switching speed of the device enables it to achieve high power density, low thermal losses and enhanced EMI performance. Hence, it is an ideal solution for power switching and circuit protection requirements in a variety of applications.

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