DMP2065UFDB-7

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The DMP2065UFDB-7 is a 76-V monolithic dual N-channel Enhancement-Mode power FET array optimized for high-efficiency switching applications. These devices feature fully integrated anti-saturation circuitry which prevents the FETs from entering saturation at higher-than-normal power levels. This unique feature allows the device to safely operate in a wide operating range, throughout its safe operating area (SOA).The components of the DMP2065UFDB-7 are comprised of two independent, isolated N-channel MOSFETs with dual-channel protection circuitry. The design of the device uses a low on-state resistance of 0.8 ohms, making the device extremely versatile in a variety of power-switching applications. The internal anti-saturation circuitry utilizes clamping voltage to ensure that the FET remains in its linear region, even when the voltage across the drain and source and current through the device exceed their maximum limits. This feature prevents the FETs from entering the saturation region and causing device stress.The design of the device is optimized for use as a switching-regulator controller and is suitable for use in applications such as simple switching or DC-DC converters. The device is also suitable for applications such as motor control, voltage and current sensing, lighting control, and thermal protection. The device also features a dielectric isolation of 5000V, making the device suitable for use in high-voltage applications.The working principle of the DMP2065UFDB-7 is based on the transfer of electrical charge between two or more electrodes forming a circuit. This charge transfer is a result of the migration of electrons from a positive pole (source) to a negative pole (drain) under the influence of electric fields. The amount of charge transferred is determined by the applied voltage, which can be adjusted by varying the gate-source voltage. When the voltage is applied, charge carriers accumulate at the drain and a channel is formed through which the carriers pass from the source to the drain.The DMP2065UFDB-7 is designed to ensure that the device remains in its linear region (as opposed to the saturation region) at all times, even when the voltage exceeds the maximum limits. This is accomplished by using an anti-saturation clamping circuit. This circuit utilizes two integrated clamping capacitors which act to limit the voltage across the FET’s drain and source terminals. By limiting the voltage, the device can remain in its linear region and the amount of power dissipated by the device is minimized.Overall, the DMP2065UFDB-7 is a versatile power FET array that is optimized for high-efficiency switching applications. The device features an integrated anti-saturation circuit which ensures the device remains in its linear region and allows the FETs to safely operate in a wide operating range. The device is suitable for use in a variety of power-switching applications and is designed to reduce the amount of power dissipated by the device.

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