DMP22D6UT-7 Allicdata Electronics
Allicdata Part #:

DMP22D6UTDITR-ND

Manufacturer Part#:

DMP22D6UT-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 20V 0.43A SOT-523
More Detail: P-Channel 20V 430mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: DMP22D6UT-7 datasheetDMP22D6UT-7 Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-523
Supplier Device Package: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Vgs (Max): ±8V
Series: --
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 430mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP22D6UT-7 is a single N-Channel Enhancement Mode Volt-FET (VFET) with a maximum drain current of 80mAh and a drain-source breakdown voltage of 620 mV. This device is designed for use in DC-DC converters, power supplies, high-speed switching applications, and high-efficiency DC motor control. The device combines the advantages of a low-on resistance, high operating temperature and high gate current capability allowing for efficient power switching.

The DMP22D6UT-7 is an enhancement mode voltage controlled FET (V-FET) which means it is on when a positive gate voltage is applied and it remains in "on" mode until the gate voltage is withdrawn. Once the gate voltage is removed, the device is in the "off" state. The device also has an avalanche breakdown capability. This means it can be used in high-voltage application circuits.

The structure of the DMP22D6UT-7 is composed of a single N-Channel MOSFET. This is what makes it a single device. The source and drain regions are formed from lightly-doped N-type material, while the gate region is formed from a highly-doped N+ material. The device can be operated both as a source and as a drain, depending on the applied gate voltage.

The DMP22D6UT-7 is characterized by a low on-resistance (RDS(ON)) and a high operating temperature (TJ) which makes it suitable for high power switching applications. The device also has a high gate current capability which allows for efficient switching at higher currents. The low RDS(ON), along with the low turn-on time of the device, make it ideal for high-frequency switching applications such as DC-DC converters and motor control.

The working principles of the DMP22D6UT-7 are relatively straightforward. When a gate voltage is applied, the device is turned on, which allows current to flow from source to drain. When the gate voltage is removed, the device is turned off and the current flow stops. As the voltage on the gate increases, the drain current increases. This is the basic principle behind all voltage-controlled FETs.

The DMP22D6UT-7 is a widely used FET in the power electronics industry due to its low RDS(ON), high temperature rating, and high gate current capabilities. It is suitable for a variety of applications such as DC-DC converters, power supplies, high-speed switching applications, and high-efficiency DC motor control. The device’s performance and reliability make it one of the most widely used voltage-controlled FETs in the world.

The specific data is subject to PDF, and the above content is for reference

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