
Allicdata Part #: | DMP2066UFDE-7DITR-ND |
Manufacturer Part#: |
DMP2066UFDE-7 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 6.2A 6DFN |
More Detail: | P-Channel 20V 6.2A (Ta) 660mW (Ta) Surface Mount U... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.10107 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type E) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 660mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1537pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 14.4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 4.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP2066UFDE-7 is an N-channel, enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor) IC component made especially for amplifying and switching electronic signals. In most cases it is a single transistor component, however there exists variations of the component that can couple together several transistors on a sheet of plastic or other material. The component is produced in several versions, each with slightly different performance characteristics.
The DMP2066UFDE-7 is designed for use in a variety of electrical equipment and devices. It is most often found in audio and amplifier circuits and other devices that require amplification of signals or provide switching capabilities, such as for programmable logic controllers or computers. It can also be used in DC-DC converters, power converters and power switching applications, particularly the synchronous rectifier type. In these applications, its low on-state resistance makes it an efficient component.
The main purpose of the DMP2066UFDE-7 is to amplify small signals, allowing them to drive other components or to act as a switch. It does this by controlling the flow of current between its two terminals, the source and the drain. The voltage at the gate dictates whether the component is ‘on’ or ‘off’ and hence whether current can flow through the component. By externally controlling the gate, this transistor can be used to amplify signals by switching them on and off at very high speeds.
The DMP2066UFDE-7 is designed for power applications, and is capable of withstanding large voltages. It also has a low threshold voltage, enabling it to switch small voltage signals, and a low on-state resistance which keeps the power consumption low even with large amounts of current flowing. It also has other characteristics such as a maximum gate-source voltage and maximum drain-source breakdown voltage, which is the maximum amount of voltage that can be applied without permanently damaging the component.
The DMP2066UFDE-7 is able to handle large amounts of current and is used in a variety of power-related applications. It is commonly used in synchronous rectifiers, which are components used to convert alternating currents into direct currents, as well as in DC-DC converters and power converters. It is also used in power switching applications and in audio and amplifier circuits. Its low on-state resistance makes it suitable for power applications, as it has very low power consumption even when large amounts of current flow through it.
In summary, the DMP2066UFDE-7 is an N-channel, enhancement-mode MOSFET transistor component made for amplifying and switching electronic signals. It is used in a variety of power applications, including synchronous rectifiers, DC-DC converters, power converters and power switching applications. It has a low on-state resistance and a low threshold voltage, enabling it to switch small voltage signals at very high speeds. It also has other characteristics such as its maximum gate-source voltage and maximum drain-source breakdown voltage, which is the maximum amount of voltage that can be applied without permanently damaging the component.
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