
Allicdata Part #: | DMP2123LQ-7DITR-ND |
Manufacturer Part#: |
DMP2123LQ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 3A SOT23 |
More Detail: | P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 443pF @ 16V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 7.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 3.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP2123LQ-7 is a N-channel enhancement-mode power MOSFET with an ultra-low on-state resistance and fast switching time. It is used across a wide range of applications, from discrete components and servers/controllers to automotive and consumer electronics. This transistor is also used for high-efficiency and high-current applications.
Applications:
The DMP2123LQ-7 is designed to switch heavy load currents and is ideal for applications where low on-state resistance and fast switching times are critical. It is suitable for motor control, DC-DC regulator circuits and synchronous rectification circuits. It is also suitable for fast switching and switching power applications. Additionally, the MOSFET can be used for hot-swapping and power factor correction (PFC).
Working Principle:
The DMP2123LQ-7 is an N-channel enhancement-mode power MOSFET. It works on the principle of depletion-mode MOS transistor, where the source and drain terminals are connected to the source-gate and source-drain junctions respectively. Similarly, the gate terminal is connected to the gate-source junction. When a voltage is applied to the gate terminal, a depletion region is created between the source and gate junctions and the size of this region is proportional to the applied voltage. This depletion region modulates the conductivity of the source-drain junction and thus affects the current flow between the source and drain.
The MOSFET also uses its characteristic of high-temperature operation and low power dissipation to its advantage. When using a MOSFET at elevated temperatures compared to room temperatures, the threshold voltage and the on-state resistance decreases. This helps reduce power losses and increases the efficiency. The DMP2123LQ-7 is also specifically designed for fast switching applications, with a rise and fall time of only 12.5ns.
Key Features:
The DMP2123LQ-7 exhibits some unique features, making it a great choice for many applications. Some of those features include:
- Ultra-low on-state resistance
- Fast switching time (rise/fall time of only 12.5ns)
- withstood EMF and RDSon protection
- High-temperature operation and low power dissipation
- Wide operating range (3.3V to 30V)
The DMP2123LQ-7 is an ideal choice for applications requiring a low on-state resistance and fast switching time. Its unique features make it suitable for hot-swapping and fast switching power applications, such as motor control, DC-DC regulator circuits, synchronous rectification circuits, and power factor correction (PFC).
The specific data is subject to PDF, and the above content is for reference
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