DMP3025LK3-13 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.15W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1678pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31.6nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	25 mOhm @ 7.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The DMP3025LK3-13 is an enhancement-mode power field effect transistor (FET) from International Rectifier. This MOSFET is part of the 3025LK family, which consists of low-charge, single N-Channel power MOSFETs. This device offers a low on-resistance and excellent saturation voltage characteristics, making it suitable for a wide range of applications in which low Rds and high current conduction is required. This article will provide an overview of the applications and working principle of the DMP3025LK3-13.

Application Field

The DMP3025LK3-13 is designed to be used in a variety of applications, including DC-DC conversion, battery charge/discharge, and power switching circuits. It also can be used as a load switch and in automotive as well as heavy industrial applications. This device is particularly suitable for synchronous rectification and other power switching applications, as it offers robust and reliable performance under harsh conditions.The DMP3025LK3-13 is able to deliver up to 25V drain current, making it suitable for use in high current and high voltage applications. Additionally, its low on-resistance and superior saturation voltage ensures it can handle high loads with low losses, translating to reduced switching and conduction losses for increased efficiency. It also has robust ESD protection, making it suitable for use in consumer electronic applications.

Working Principle

The DMP3025LK3-13 operates by utilizing the principle of enhancement-mode power field-effect transistor (FET). A MOSFET is an electronic switch designed to be used in both analog and digital circuits. It uses a metal oxide gate between the source gate and the drain gate, thereby providing an electrical barrier between the two. When a gate voltage is applied, the metal oxide gate accumulates charges, resulting in a potential barrier between source and drain. This barrier prevents current from flowing through the device. When a voltage greater than the threshold voltage is applied to the gate, the potential barrier is lowered, allowing current to flow through the device. In this manner, the device can be used as an efficient electrical switch.The device also has superior saturation voltage characteristics. This allows it to handle high current without experiencing significant energy losses. Additionally, the device has a low on-resistance, translating to reduced power loss and increased power efficiency in applications that require frequent switching.

Conclusion

The DMP3025LK3-13 is a power MOSFET designed for use in a variety of applications. It offers excellent features, such as low on-resistance and superior saturation voltage, which make it suitable for use in DC-DC conversion, battery charge/discharge, and power switching circuits. It also has robust ESD protection, making it suitable for use in consumer electronic applications. The device operates according to the principle of enhancement-mode power field-effect transistor, and its superior features ensure that it can handle high loads with low losses.

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