Allicdata Part #: | DMP3125L-13-ND |
Manufacturer Part#: |
DMP3125L-13 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 25V 30V SOT23 T&R |
More Detail: | P-Channel 30V 2.5A (Ta) 650mW (Ta) Surface Mount S... |
DataSheet: | DMP3125L-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04729 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 650mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 254pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.1nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 95 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMP3125L-13 is a N-Channel enhancement mode power field effect transistor (FET) with low on resistance figures and marked thermally stable amplifier characteristics. The device is ideally suited for power management and low signal control applications. This product is designed for use in a wide range of applications, including battery management, DC/DC converters and power optimization applications.
The working principle of the DMP3125L-13 is based on the principles of surface field-effect transistors, or FETs. These are semiconductor devices with three terminals—a source, a drain and a gate—in which the source and drain have been heavily doped, while the gate has been lightly doped and can be used to control the current that flows through the device. This is done by using a voltage applied to the gate, which forms a strong electrostatic barrier around the outside of the channel, preventing the current from flowing through the device. When the voltage of the gate is large enough, the electrostatic barrier becomes too thick and the current is restricted, thus limiting the current and eliminating the need for the user to apply a large current through the device.
The DMP3125L-13 is designed primarily for power switching applications, in which it is expected to switch between two different states—either an on state or a high-impedance off state—at different times. In the on state, the current that is supplied to the device is either increased or decreased, depending on the applied voltage. In the off state, the device is at a high impedance, meaning that current is not allowed to pass through the device. Unlike some other FETs, the DMP3125L-13 is able to maintain a stable, high-impedance off state despite large fluctuations in temperature, making it ideal for use in high temperature applications.
The DMP3125L-13 also has the advantage of being able to process and deliver high voltages with minimal losses, which makes it suitable for switching high current applications. Additionally, the device is able to operate at low power levels, allowing it to be used in places where power consumption is a concern. Furthermore, the device features a low input capacitance, meaning that it is able to switch quickly without generating too much electrical noise. This makes it an ideal choice for applications where fast switching, accuracy and low noise are of paramount importance.
Overall, the DMP3125L-13 is a highly-efficient FET, boasting superior switching performance and low noise levels compared to other competing devices. In addition to its low-power operation, this product is engineered to handle a wide range of temperature and voltage conditions, making it suitable for a wide range of applications. Whether it\'s used for power switching, high-current switching or low-noise applications, the DMP3125L-13 is an excellent choice for any application.
The specific data is subject to PDF, and the above content is for reference
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