DMP3065LVT-7 Discrete Semiconductor Products

Gate Charge (Qg) (Max) @ Vgs:	12.3nC @ 10V
Base Part Number:	DMP3065
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSOT-26
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	587pF @ 15V
Vgs (Max):	±20V
Series:	--
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Rds On (Max) @ Id, Vgs:	42 mOhm @ 4.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.9A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<ul> <li><strong>Introduction</strong></li></ul><p>DMP3065LVT-7 is a low voltage N-Channel enhancement mode power field effect transistor (FET). The transistors is designed to provide good internal power Dissipation and high-current carrying capability under low gate-source voltages. It is designed with a high level of integration to enable energy efficiency and superior cost-effectiveness. Due to its high-performance, the transistor is widely used in a variety of applications.</p><ul> <li><strong>Application Field</strong></li></ul><p>The DMP3065LVT-7 has a variety of applications, most of which are related to battery-powered portable products. It is used in power management applications, such as battery chargers and adaptors, for notebook PCs, cell phones and telecom applications. The transistor also has audio and display applications such as PDAs, digital cameras, and LCD displays. Additionally, it is used in communications, networking and wireless applications, as it is well-suited for high-speed logic level control. Similar transistors provide an independent dc/dc converter with a 5V voltage regulator, which helps to extend the system battery life.</p><ul> <li><strong>Working Principle</strong></li></ul><p>The transistor operates on the principle of field effect tunneling. This means that when an electric field is applied to the substrate surface with a gate voltage, the electric field modifies the energy conduction of the channel and allows current to flow through the source and drain. The flow of current is controlled by the magnitude of the electric field and the resulting channel width or “pinch off” threshold.</p><p>The DMP3065LVT-7 is constructed of a single N-Channel Enhancement-Mode FET, as well as associated circuitry. The gate is connected to the substrate, and the source and drain are connected to a gate tubing structure. By applying a gate voltage, a large electric field is created and causes the channel, or pinch off region, to become narrower or larger. This controls the maximum current flow through the transistor. Additionally, the transistor features a low RDS (ON) and low gate charge characteristics to deliver superior efficiency and power savings in a variety of applications.</p><ul> <li><strong>Conclusion</strong></li></ul><p>The DMP3065LVT-7 offers reliable performance and superior energy efficiency while enabling cost-effective power management solutions. Its wide range of applications in battery powered applications and peripheral devices make it one of the most versatile transistors on the market. Additionally, its high-speed logic level control and low gate charge characteristics reduce system power losses and maximize system efficiency for extended battery life.</p>

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