DMP3028LK3-13 Discrete Semiconductor Products

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The DMP3028LK3-13 is a single n-channel enhancement-mode MOSFET. It is designed for high-frequency DC-DC applications such as DC-DC converters, computer and power supplies, electric vehicles and solar cells. It has a breakdown voltage of -30V and a drain-source current capacity ( Id ) up to -7.5A. This provides the required current performance for a range of applications.

The DMP3028LK3-13 is a rugged, integrated MOSFET device built using DMP3028LK3-13 technology. It is designed to meet the voltage and current requirements of modern power systems. It provides superior performance in terms of on-resistance, switching frequencies, turn-on and turn-off speeds, and superior reliability with the platform\'s advanced stress protection technology.

The DMP3028LK3-13 features enhanced reliability through the use of a unique monolithic MOSFET structure, which can withstand higher voltage transients than traditional planar MOSFET devices. The device is fabricated using extremely low-resistance wafered silicon, allowing for optimal energy efficiency during operation. It also has a low input capacitance and output capacitance for extreme high-frequency performance.

The DMP3028LK3-13 features a unique gate oxide barrier that prevents hot carrier injection and provides superior break-over characteristics, which reduces EMI and RFI noise generation. It exhibits minimum gate-source capacitance, thus enabling instantaneous switching with minimal transient noise.

The device has excellent drain-source ON-resistance and short channel ON-resistance. It has an ON-resistance of less than 7 mOhm across an operating temperature range of -55 to 175°C. The die has a reverse blocking diode integrated into it, which helps prevent the MOSFET from breaking down in the event of a short circuit or reverse voltage applied to the gate.

The DMP3028LK3-13 is ideal for applications such as DC-DC converters and switching power supplies, electric vehicles, solar cells, high-frequency DC-DC applications, and high-power amplifiers. It features wide drain-source voltage and current ranges that make it suitable for exacting power supply applications.

The working principle of a single n-channel enhancement-mode MOSFET is based on the MOSFET device structure, which includes the source terminal, drain terminal, gate terminal, and substrate. When the gate terminal is biased with a voltage, a conducting channel is created between the source and the drain. This channel allows current to flow through the device when a positive gate-source bias is applied and the device is said to be in its "ON" state.

The gate-source voltage determines the "ON" resistance of the MOSFET, which is the resistance between the drain and source terminals when the channel is "ON". The channel resistance is minimum when the voltage applied to the gate is maximum. When the gate-source voltage is zero, the channel is "OFF" and there is no current flowing through the device.

The DMP3028LK3-13 is also designed with advanced stress protection technology and superior thermal performance to support high-power applications. Its extremely low OFF-state leakage current and fast switching speed allow it to achieve good power efficiency and better system performance. Its die is double-connected, ensuring fewer chances of parasitic inductances that can lead to voltage spikes or shoot-through, which can potentially damage the device.

The DMP3028LK3-13 is an integrated MOSFET device that offers high performance and excellent reliability for a wide range of applications. It is ideal for high-frequency DC-DC applications such as DC-DC converters, computer and power supplies, electric vehicles, and solar cells due to its superior on-resistance, low input capacitance and output capacitance, and enhanced reliability. The device also has an integrated reverse blocking diode, which helps prevent it from breaking down in the event of a short circuit or reverse voltage applied to the gate. It is designed with advanced stress protection technology to provide excellent thermal performance and reliable operation.

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