Allicdata Part #: | DMP3056LVT-7-ND |
Manufacturer Part#: |
DMP3056LVT-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V TSOT-26 |
More Detail: | P-Channel 30V 4.3A (Ta) 1.38W |
DataSheet: | DMP3056LVT-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | -- |
Supplier Device Package: | -- |
Mounting Type: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.38W |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 642pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Preliminary |
Packaging: | Tape & Reel (TR) |
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The DMP3056LVT-7 MOSFET is a type of transistor that is commonly used in the electronics field, especially in applications such as power amplification, switching applications, and voltage conversion. The DMP3056LVT-7 MOSFET is flexible, with a range of operating temperatures, a low power consumption, and a high switching speed. This makes it suitable for a wide range of applications.
The DMP3056LVT-7 MOSFET is a N-channel enhancement mode MOSFET. It is a voltage controlled device, meaning that the voltage applied to the MOSFET gates affects the conduction of current flow from the source to the drain.
The application field of the DMP3056LVT-7 MOSFET is primarily in power amplification and switching because of its high power handling capability. It has a wide operating temperature range and operates at a low power consumption, which allows it to be used in applications that require stable operation and robust design. The MOSFET also has a high switching speed, which makes it suitable for high frequency applications. Additionally, its low gate threshold voltage makes it suitable for low voltage applications.
The working principle of the DMP3056LVT-7 MOSFET is based on its N-channel construction. This type of MOSFET consists of two conducting channel regions – the source and the drain. Between these two channel regions is the transistor gate, which is insulated from the channel by an oxide layer. The voltage applied to the gate affects the conductivity of the channel, allowing current flow from the source to the drain.
When a positive voltage is applied to the gate, it attracts electrons, creating a potential inversion region. This potential inversion allows for current to flow from the source to the drain, allowing for the flow of electrons, creating a current flow through the MOSFET. The controlling voltage applied to the gate determines the current flow through the MOSFET.
The DMP3056LVT-7 MOSFET is a versatile device that can be used in a wide range of applications and is suitable for high frequency switching, power amplification, and voltage conversion. It has a wide operating temperature range and a low power consumption, which make it ideal for applications that require flexibility and robust design. Its high switching speed, high power handling capability, and low gate threshold voltage also make it suitable for low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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