Allicdata Part #: | DMP3035SFG-7DI-ND |
Manufacturer Part#: |
DMP3035SFG-7 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V POWERDI3333-8 |
More Detail: | P-Channel 30V 8.5A (Ta) 950mW (Ta) Surface Mount P... |
DataSheet: | DMP3035SFG-7 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.14206 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 950mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1633pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP3035SFG-7 is a N-Channel Enhancement Mode Field-Effect Transistor (FET) with three terminals (gate, drain, source) that are used to control the flow of current. It is a type of semiconductor device commonly used in various applications ranging from consumer electronics to industrial controls. This FET has an increased ability to handle higher voltages and currents than its predecessors, making it suitable for certain power management applications. In this article, we will discuss the application field and working principle of the DMP3035SFG-7.
Application Field
The DMP3035SFG-7 can be used in a variety of application fields and has been designed to meet the requirements of many industries, including automotive, consumer electronics, computer and telecommunications, and industrial control.
One of the most common applications for the DMP3035SFG-7 is as a power switch in automotive applications. In this application, the FET can be used to control and regulate higher voltages, allowing for more efficient and precise power management. The DMP3035SFG-7 can also be used in applications requiring higher switching speeds and superior temperature performance, such as those in consumer electronics and computer and telecommunications.
The DMP3035SFG-7 is also commonly used in industrial control applications, such as automated equipment and robotics. This type of FET excels in these applications due to its superior heat dissipation and switching performance. Additionally, the FET\'s unique construction allows for higher power capabilities, making it well-suited for applications with high power loads.
Working Principle
The working principle of the DMP3035SFG-7 is based on the physics of a traditional FET. It works by allowing the flow of electric current between the source and the drain terminals to be controlled by the voltage applied to the gate terminal. This principle is based on the fact that an electric current can be generated in a semiconductor material when a positive voltage is applied to the gate terminal and a negative voltage is applied to the source terminal. This electric current, known as the drain current, is regulated based on the voltage applied to the gate terminal.
When the voltage applied to the gate terminal is positive, the drain current is at its maximum value, as all of the current will flow from the source to the drain. This is known as the “on” state of the FET. When the voltage at the gate terminal is reduced or is equal to zero, the drain current will be decreased due to the reduction or complete inhibition of electric current. This is known as the “off” state of the FET.
In summary, the DMP3035SFG-7 is a N-Channel Enhancement Mode Field-Effect Transistor (FET) designed for applications in automotive, consumer electronics, computer and telecommunications, and industrial control. The working principle of the DMP3035SFG-7 is based on the physics of a traditional FET, whereby the flow of electricity between the source and drain terminals is regulated by the voltage applied to the gate terminal. This allows the FET to be used in applications such as power management and higher switching speeds.
The specific data is subject to PDF, and the above content is for reference
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