| Allicdata Part #: | DMP34M4SPS-13DITR-ND |
| Manufacturer Part#: |
DMP34M4SPS-13 |
| Price: | $ 0.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET BVDSS: 25V 30V POWERDI506 |
| More Detail: | P-Channel 30V 135A (Tc) 1.5W Surface Mount PowerDI... |
| DataSheet: | DMP34M4SPS-13 Datasheet/PDF |
| Quantity: | 9000 |
| 1 +: | $ 0.28800 |
| 10 +: | $ 0.27936 |
| 100 +: | $ 0.27360 |
| 1000 +: | $ 0.26784 |
| 10000 +: | $ 0.25920 |
| Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PowerDI5060-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3775pF @ 15V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 127nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 135A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMP34M4SPS-13 is a depletion-mode MOSFET from Diodes Incorporated. The device is a single N-Channel enhancement mode vertical MOSFET, and it is well-suited for a variety of a wide range of applications.
The DMP34M4SPS-13 is a versatile component, capable of providing excellent protection from high voltage and electrostatic discharges. Its high voltage capability makes it an ideal solution for applications such as AC/DC switching, motor control, and DC/DC converters.
The part offers low on-state resistance, ensuring fast switching speeds and high current capability. It also features low gate leakage current and low capacitance, which make it suitable for high-speed switching and digital logic circuits.
The DMP34M4SPS-13 operates in the depletion mode, meaning that the channel is normally turned off. In order to activate the channel and allow current to flow, a negative voltage must be applied to the gate. This allows the MOSFET to be used as a switch in applications that require a low signal to turn the device on.
The DMP34M4SPS-13 also features a built-in diode for reverse bias protection. This diode provides an ideal protection if the logic signal passed to the MOSFET is reversed, being therefore suitable for applications with transient voltages.
The DMP34M4SPS-13 offers a breakdown voltage (BVDSS) of 100V and its drain-source resistance (RDSon) is 4.55Ω. The device is rated to handle up to a 15A drain current and up to an 4W power dissipation.
The DMP34M4SPS-13 is available in surface mount SOT-223 package and its junction temperature maximum is 125°C. Its thermal resistance is small, giving the device a fast response for a wide range of applications.
In summary, the DMP34M4SPS-13 is an excellent solution for applications that require high voltage, fast switching speeds and high current capabilities. Its depletion mode operation and its built-in diode make it ideal for circuit protection, and its thermal resistance ensures fast response while operating in high temperature environments. This device is available in a variety of package options and its technical specifications make it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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DMP34M4SPS-13 Datasheet/PDF