| Allicdata Part #: | 917-EPC2103ENG-ND |
| Manufacturer Part#: |
EPC2103ENG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | EPC |
| Short Description: | TRANS GAN 2N-CH 80V BUMPED DIE |
| More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 80V 23A Su... |
| DataSheet: | EPC2103ENG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | eGaN® |
| Packaging: | Tray |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 80V |
| Current - Continuous Drain (Id) @ 25°C: | 23A |
| Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 40V |
| Power - Max: | -- |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EPC2103ENG is a monolithic field effect transistor (MOSFET) array designed for use in uncluttered environments providing for increased efficiency and increased reliability. This device is ideal for a diverse range of applications from power control, temperature control and voltage regulation to various industrial control functions.
The EPC2103ENG employs a four-phase inverter, with a single gate and three low-resistance MOSFET devices arranged in a package allowing four-phase parallel operation. This provides excellent current handling capability and improved efficiency. It also uses four pins for connecting both the drain and source so that multiple devices can be grouped into an array for parallel operation.
The EPC2103ENG is well-suited for a wide range of applications including motor controls, heating elements, air conditioning, exhaust fans, industrial instrumentation and various other controls. It is also suitable for the manufacture of integrated circuits, op-amps and other discrete components.
The working principle of the EPC2103ENG is based on field effect technology, which utilizes an electric field to control a channel formed between source and drain. The channel is formed when a positive voltage is applied to the gate, allowing current to flow between the source and drain. When the positive voltage is removed, the channel closes, blocking the current. By using an overflow protection circuit, the EPC2103ENG ensures that only a safe level of power flows through the device.
In addition, the EPC2103ENG has a fail-safe protection feature that is designed to shut down the device in the event of an overload. This helps to reduce the chances of damage to the MOSFET and prevents the occurrence of false triggering or other malfunctioning due to overcurrent or overheating. The device comes with a built-in drain-source voltage limiter which helps to ensure safe operations and offers better protection from possible catastrophic failures.
The EPC2103ENG also offers a low power consumption, low channel resistance and low on-state voltage, making it an ideal choice for portable electronics and other battery-powered applications. In addition, the device is designed to minimize radiated noise to enhance overall system performance.
Overall, the EPC2103ENG is a versatile and reliable MOSFET array that provides superior performance, low power consumption and total immunity against electromagnetic interference. It is suitable for use in a wide range of applications, offering dependable performance, increased efficiency and longer life.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| EPC2111 | EPC | -- | 22500 | TRANS GAN ASYMMETRICAL HA... |
| EPC2038ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V 0.5A BUMPE... |
| EPC2024 | EPC | 3.62 $ | 6000 | MOSFET NCH 40V 60A DIEN-C... |
| EPC2031ENGRT | EPC | 3.12 $ | 5500 | MOSFET NCH 60V 31A DIEN-C... |
| PVQ-EPC20 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2LI20N | Intel FPGAs/... | 73.88 $ | 1000 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2LI20NGA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| EPC2051ENGRT | EPC | 0.41 $ | 2500 | TRANS GAN 100V DIE CU PIL... |
| EPC2032 | EPC | 3.23 $ | 8000 | TRANS GAN 100V 48A BUMPED... |
| EPC2100 | EPC | 3.75 $ | 7500 | TRANS GAN ASYMMETRICAL HA... |
| EPC2023ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 30V 60A BUMPED ... |
| EPC2108ENGRT | EPC | 0.64 $ | 2500 | TRANS GAN 3N-CH BUMPED DI... |
| EPC2105ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
| EPC2001 | EPC | 2.76 $ | 47000 | TRANS GAN 100V 25A BUMPED... |
| EPC2102ENGRT | EPC | 3.78 $ | 6500 | MOSFET 2 N-CHANNEL 60V 23... |
| EPC2023ENG | EPC | 0.0 $ | 1000 | TRANS GAN 30V 60A BUMPED ... |
| EPC2036 | EPC | -- | 535779 | TRANS GAN 100V 1A BUMPED ... |
| EPC2104ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 100V BUMP... |
| EPC2015C | EPC | -- | 17500 | TRANS GAN 40V 33A BUMPED ... |
| EPC2LC20EM | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| EPC2022 | EPC | 3.81 $ | 4500 | TRANS GAN 100V 3MOHM BUMP... |
| EPC2106 | EPC | -- | 14000 | TRANS GAN SYM 100V BUMPED... |
| EPC2105 | EPC | 3.87 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2025ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 300V 4A BUMPED ... |
| EPC2LC20 | Intel FPGAs/... | -- | 1034 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2015 | EPC | 0.0 $ | 1000 | TRANS GAN 40V 33A BUMPED ... |
| EPC2039 | EPC | -- | 135000 | TRANS GAN 80V BUMPED DIEN... |
| EPC2010 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 12A BUMPED... |
| EPC2038 | EPC | -- | 180000 | TRANS GAN 100V 2.8OHM BUM... |
| EPC2100ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 30V BUMPE... |
| EPC2037ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V BUMPED DIE... |
| EPC2115ENGRT | EPC | 2.74 $ | 1000 | 150 V GAN IC DUAL FET DRI... |
| EPC2025 | EPC | 0.0 $ | 1000 | TRANS GAN 300V 150MO BUMP... |
| EPC2034ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 200V 31A BUMPED... |
| EPC2014C | EPC | -- | 77500 | TRANS GAN 40V 10A BUMPED ... |
| PVQ-EPC28 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2019 | EPC | -- | 11000 | TRANS GAN 200V 8.5A BUMPE... |
| EPC2106ENGRT | EPC | 0.6 $ | 17500 | TRANS GAN 2N-CH 100V BUMP... |
| EPC2110ENGRT | EPC | 0.78 $ | 12500 | TRANS GAN 2N-CH 120V BUMP... |
| EPC2TC32 | Intel FPGAs/... | -- | 263 | IC CONFIG DEVICE 1.6MBIT ... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
EPC2103ENG Datasheet/PDF