EPC2103ENG Allicdata Electronics
Allicdata Part #:

917-EPC2103ENG-ND

Manufacturer Part#:

EPC2103ENG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN 2N-CH 80V BUMPED DIE
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 80V 23A Su...
DataSheet: EPC2103ENG datasheetEPC2103ENG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: eGaN®
Packaging: Tray 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Power - Max: --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The EPC2103ENG is a monolithic field effect transistor (MOSFET) array designed for use in uncluttered environments providing for increased efficiency and increased reliability. This device is ideal for a diverse range of applications from power control, temperature control and voltage regulation to various industrial control functions.

The EPC2103ENG employs a four-phase inverter, with a single gate and three low-resistance MOSFET devices arranged in a package allowing four-phase parallel operation. This provides excellent current handling capability and improved efficiency. It also uses four pins for connecting both the drain and source so that multiple devices can be grouped into an array for parallel operation.

The EPC2103ENG is well-suited for a wide range of applications including motor controls, heating elements, air conditioning, exhaust fans, industrial instrumentation and various other controls. It is also suitable for the manufacture of integrated circuits, op-amps and other discrete components.

The working principle of the EPC2103ENG is based on field effect technology, which utilizes an electric field to control a channel formed between source and drain. The channel is formed when a positive voltage is applied to the gate, allowing current to flow between the source and drain. When the positive voltage is removed, the channel closes, blocking the current. By using an overflow protection circuit, the EPC2103ENG ensures that only a safe level of power flows through the device.

In addition, the EPC2103ENG has a fail-safe protection feature that is designed to shut down the device in the event of an overload. This helps to reduce the chances of damage to the MOSFET and prevents the occurrence of false triggering or other malfunctioning due to overcurrent or overheating. The device comes with a built-in drain-source voltage limiter which helps to ensure safe operations and offers better protection from possible catastrophic failures.

The EPC2103ENG also offers a low power consumption, low channel resistance and low on-state voltage, making it an ideal choice for portable electronics and other battery-powered applications. In addition, the device is designed to minimize radiated noise to enhance overall system performance.

Overall, the EPC2103ENG is a versatile and reliable MOSFET array that provides superior performance, low power consumption and total immunity against electromagnetic interference. It is suitable for use in a wide range of applications, offering dependable performance, increased efficiency and longer life.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "EPC2" Included word is 40
Part Number Manufacturer Price Quantity Description
EPC2015C EPC -- 17500 TRANS GAN 40V 33A BUMPED ...
EPC2XXA Intel FPGAs/... 0.0 $ 1000 IC FPGA FBGA
EPC2016C EPC -- 492500 TRANS GAN 100V 18A BUMPED...
EPC2106 EPC -- 14000 TRANS GAN SYM 100V BUMPED...
EPC2105 EPC 3.87 $ 10000 TRANS GAN ASYMMETRICAL HA...
EPC2034 EPC 4.0 $ 2000 TRANS GAN 200V 48A BUMPED...
EPC2103ENGRT EPC 3.83 $ 5000 TRANS GAN SYM HALF BRDG 8...
EPC2LI20 Intel FPGAs/... -- 61 IC CONFIG DEVICE 1.6MBIT ...
EPC2TI32N Intel FPGAs/... 90.29 $ 2000 IC CONFIG DEVICE 1.6MBIT ...
EPC2032ENGRT EPC 0.0 $ 1000 TRANS GAN 100V 48A BUMPED...
EPC2030 EPC 3.27 $ 8500 MOSFET NCH 40V 31A DIEN-C...
EPC2036 EPC -- 535779 TRANS GAN 100V 1A BUMPED ...
EPC2104ENG EPC 0.0 $ 1000 TRANS GAN 2N-CH 100V BUMP...
EPC2102ENG EPC 0.0 $ 1000 TRANS GAN 2N-CH 60V BUMPE...
EPC2007 EPC 0.0 $ 1000 TRANS GAN 100V 6A BUMPED ...
EPC2010C EPC 2.98 $ 15500 TRANS GAN 200V 22A BUMPED...
EPC2023 EPC 3.58 $ 8500 TRANS GAN 30V 60A BUMPED ...
EPC2112ENGRT EPC 2.7 $ 1000 200 V GAN IC FET DRIVERHi...
EPC2036ENGRT EPC 0.0 $ 1000 MOSFET N-CH 100V 1.7A DIE...
EPC2LI20N Intel FPGAs/... 73.88 $ 1000 IC CONFIG DEVICE 1.6MBIT ...
EPC2108ENGRT EPC 0.64 $ 2500 TRANS GAN 3N-CH BUMPED DI...
EPC2105ENG EPC 0.0 $ 1000 TRANS GAN 2N-CH 80V BUMPE...
EPC2031 EPC 3.12 $ 5500 MOSFET NCH 60V 31A DIEN-C...
EPC2014 EPC 0.69 $ 9000 TRANS GAN 40V 10A BUMPED ...
EPC2040ENGRT EPC 0.0 $ 1000 TRANS GAN 15V BUMPED DIEN...
EPC2050ENGRT EPC 2.62 $ 1000 TRANS GAN 350V BUMPED DIE...
EPC2012 EPC 0.0 $ 1000 TRANS GAN 200V 3A BUMPED ...
EPC2001C EPC -- 165000 TRANS GAN 100V 36A BUMPED...
EPC2047ENGRT EPC 4.24 $ 1000 TRANS GAN 200V BUMPED DIE...
EPC2046ENGRT EPC 3.16 $ 3000 TRANS GAN 200V BUMPED DIE...
EPC2108 EPC 0.64 $ 17500 MOSFET 3 N-CH 60V/100V 9B...
EPC2019 EPC -- 11000 TRANS GAN 200V 8.5A BUMPE...
EPC2106ENGRT EPC 0.6 $ 17500 TRANS GAN 2N-CH 100V BUMP...
EPC2110ENGRT EPC 0.78 $ 12500 TRANS GAN 2N-CH 120V BUMP...
EPC2103ENG EPC 0.0 $ 1000 TRANS GAN 2N-CH 80V BUMPE...
EPC2037ENGR EPC 0.0 $ 1000 TRANS GAN 100V BUMPED DIE...
EPC2025 EPC 0.0 $ 1000 TRANS GAN 300V 150MO BUMP...
EPC2034ENGRT EPC 0.0 $ 1000 TRANS GAN 200V 31A BUMPED...
EPC2115ENGRT EPC 2.74 $ 1000 150 V GAN IC DUAL FET DRI...
EPC2051ENGRT EPC 0.41 $ 2500 TRANS GAN 100V DIE CU PIL...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics