Allicdata Part #: | 917-EPC2103ENG-ND |
Manufacturer Part#: |
EPC2103ENG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 2N-CH 80V BUMPED DIE |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 80V 23A Su... |
DataSheet: | EPC2103ENG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | eGaN® |
Packaging: | Tray |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 23A |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 40V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The EPC2103ENG is a monolithic field effect transistor (MOSFET) array designed for use in uncluttered environments providing for increased efficiency and increased reliability. This device is ideal for a diverse range of applications from power control, temperature control and voltage regulation to various industrial control functions.
The EPC2103ENG employs a four-phase inverter, with a single gate and three low-resistance MOSFET devices arranged in a package allowing four-phase parallel operation. This provides excellent current handling capability and improved efficiency. It also uses four pins for connecting both the drain and source so that multiple devices can be grouped into an array for parallel operation.
The EPC2103ENG is well-suited for a wide range of applications including motor controls, heating elements, air conditioning, exhaust fans, industrial instrumentation and various other controls. It is also suitable for the manufacture of integrated circuits, op-amps and other discrete components.
The working principle of the EPC2103ENG is based on field effect technology, which utilizes an electric field to control a channel formed between source and drain. The channel is formed when a positive voltage is applied to the gate, allowing current to flow between the source and drain. When the positive voltage is removed, the channel closes, blocking the current. By using an overflow protection circuit, the EPC2103ENG ensures that only a safe level of power flows through the device.
In addition, the EPC2103ENG has a fail-safe protection feature that is designed to shut down the device in the event of an overload. This helps to reduce the chances of damage to the MOSFET and prevents the occurrence of false triggering or other malfunctioning due to overcurrent or overheating. The device comes with a built-in drain-source voltage limiter which helps to ensure safe operations and offers better protection from possible catastrophic failures.
The EPC2103ENG also offers a low power consumption, low channel resistance and low on-state voltage, making it an ideal choice for portable electronics and other battery-powered applications. In addition, the device is designed to minimize radiated noise to enhance overall system performance.
Overall, the EPC2103ENG is a versatile and reliable MOSFET array that provides superior performance, low power consumption and total immunity against electromagnetic interference. It is suitable for use in a wide range of applications, offering dependable performance, increased efficiency and longer life.
The specific data is subject to PDF, and the above content is for reference
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