EPC2036 Discrete Semiconductor Products |
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| Allicdata Part #: | 917-1100-6-ND |
| Manufacturer Part#: |
EPC2036 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | EPC |
| Short Description: | TRANS GAN 100V 1A BUMPED DIE |
| More Detail: | N-Channel 100V 1A (Ta) Surface Mount Die |
| DataSheet: | EPC2036 Datasheet/PDF |
| Quantity: | 535779 |
| Series: | eGaN® |
| Packaging: | Digi-Reel® |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 1A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.91nC @ 5V |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 90pF @ 50V |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
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The EPC2036 is a single n-channel enhancement-modePower MOSFET designed for use in digital and analog signal processing applications. To understand how the EPC2036 works and how it can help process signals, let’s look at its application field and working principle.
Application Field
The EPC2036 is a versatile device that is widely used in a variety of applications. It can be used in low power circuits used in consumer electronics, such as cell phones and handheld devices, as well as in applications that require larger amounts of power, such as power supply regulation, power switching, and motor control. It is also used in analog circuits for signal processing applications, providing low noise amplification, signal conversion, and other signal processing functions.
Working Principle
At the heart of the EPC2036 is a metal–oxide–semiconductor field-effect transistor (MOSFET). A MOSFET is a device in which the input-output relationship is determined by the gate voltage, rather than the base current varying that of a bipolar transistor. MOSFETs are popular for use in power applications due to their low on-state resistance, allowing for high efficiency operation. They also have fast switching speeds, making them ideal for high frequency applications.
The EPC2036 is an enhancement-mode MOSFET with a n-channel structure. This means that the input gate is connected to the drain and the output source is connected to the drain. When the gate voltage is below the threshold voltage, the MOSFET is off and there is no current flow. When the gate voltage is increased and rises above the threshold voltage, the MOSFET is switched on, allowing current flow between the drain and source.
The EPC2036 has a maximum drain-source voltage (VDS) of 20 V and a maximum drain current (ID) of 36A. Its on-state resistance (RDS on) is low and its capacitance is high, allowing for high-frequency operation and higher efficiency due to its low switching losses. The EPC2036 is designed to operate over a wide range of temperatures and is also available in a plastic package for improved thermal efficiency.
Conclusion
The EPC2036 is an ideal solution for applications in consumer and industrial electronics. Its low on-state resistance and high capacitance make it suitable for power applications with high efficiency operation, while its fast switching speed makes it ideal for high frequency applications. also available in a plastic package, providing improved thermal efficiency. With its wide range of operating temperature range, it can handle high voltage and current applications, making it a versatile and reliable option for digital and analog signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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EPC2036 Datasheet/PDF