EPC2024 Discrete Semiconductor Products |
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| Allicdata Part #: | 917-1106-2-ND |
| Manufacturer Part#: |
EPC2024 |
| Price: | $ 3.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | EPC |
| Short Description: | MOSFET NCH 40V 60A DIE |
| More Detail: | N-Channel 40V 60A (Ta) Surface Mount Die |
| DataSheet: |  EPC2024 Datasheet/PDF |
| Quantity: | 6000 |
| 500 +: | $ 3.29031 |
| Vgs(th) (Max) @ Id: | 2.5V @ 19mA |
| Package / Case: | Die |
| Supplier Device Package: | Die |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 20V |
| Vgs (Max): | +6V, -4V |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 37A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | GaNFET (Gallium Nitride) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The EPC2024 is a enhancement-mode (normally-off)Polar power MOSFET based on gallium nitride. It is an advanced full-replacement device for silicon devices. This device can increase efficiency and provide better performance than conventional silicon devices.
EPC2024 has a number of application fields, these include: boost converters, bridge converters, AC-DC and DC-DC converters, power supplies, and power level controls. The device can withstand operating temperature range up to 175°C and provide high efficiency and power density.
The working principle of the EPC2024 is a little bit different from other enhancement mode power MOSFETs. It has an additional body diode, which reduces switching losses and improves efficiency.
The body diode can be connected in forward or reverse direction. When in forward mode, it works as a "switch" and helps with the current flow. When in reverse mode, it works as an additional resistor and reduces the voltage drop across the device.
The EPC2024 device is also characterized by its low on-resistance and gate-source capacitance. Its low on-resistance makes it ideal for high current and high speed applications, while its low gate-source capacitance helps reduce leakage current.
In addition, the EPC2024 also has a wide safe operating area (SOA) which allows it to survive short circuit, over current and over temperature conditions. Moreover, it has high avalanche ruggedness and high ESD rating, making it very robust.
In short, the EPC2024 is an advanced full-replacement device for conventional silicon MOSFETs. It has several advantages over silicon, such as higher efficiency, higher power density, low on-resistance, low gate-source capacitance, and a wide SOA. Additionally, its body diode also helps reduce switching losses and improve efficiency.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| EPC2039ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 80V 6.8A BUMPED... |
| EPC2025 | EPC | 0.0 $ | 1000 | TRANS GAN 300V 150MO BUMP... |
| EPC2016 | EPC | 0.0 $ | 1000 | TRANS GAN 100V 11A BUMPED... |
| EPC2018 | EPC | 0.0 $ | 1000 | TRANS GAN 150V 12A BUMPED... |
| EPC2037ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V BUMPED DIE... |
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| EPC2040ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 15V BUMPED DIEN... |
| EPC2007 | EPC | 0.0 $ | 1000 | TRANS GAN 100V 6A BUMPED ... |
| EPC2010 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 12A BUMPED... |
| EPC2012 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 3A BUMPED ... |
| EPC2015 | EPC | 0.0 $ | 1000 | TRANS GAN 40V 33A BUMPED ... |
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| EPC2102ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2103ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
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