EPC2031ENGRT Discrete Semiconductor Products

EPC2031ENGRT Application Field and Working Principle

The EPC2031ENGRT is a single Monolithic N-Channel Field Effect Transistor (FET). It has excellent surface mount solution in low and medium voltage applications.

Applications

This device is suitable for fast switching applications in TV and VCR line driver, motor and relay control, switching power supply, battery power switch.

Features

• Low on-state resistance
• Low drive current
• High power dissipation
• Low threshold voltage
• Low gate charge
• High avalanche energy capability

Working Principle

A field-effect transistor (FET) is a type of transistor that uses electric fields to control the flow of electrons between its source and drain terminals and its gate terminal. In an N-Channel FET, an electric field is created by a voltage applied between the gate and the source of the device. This electric field modulates the conductivity of the channel between the source and the drain.

The EPC2031ENGRT is an N-Channel FET with an enhancement-mode, i.e., it requires a positive voltage to be applied to the gate in order to turn on the device. The EPC2031ENGRT has a low threshold voltage, which means it can be turned on with a relatively small voltage applied to the gate terminal. It is also capable of handling high power and has a high avalanche energy capability.

When a voltage is applied to the gate terminal of the EPC2031ENGRT, the electric field created between the gate and the source modulates the conductivity of the channel between the source and the drain. This allows electrons to flow between the source and the drain, thus allowing current to flow. This on-state resistance of the EPC2031ENGRT is very low, which allows it to switch rapidly and dissipate relatively high power.