EPC2110ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2110ENGRTR-ND |
Manufacturer Part#: |
EPC2110ENGRT |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 2N-CH 120V BUMPED DIE |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Source 120V... |
DataSheet: | EPC2110ENGRT Datasheet/PDF |
Quantity: | 12500 |
2500 +: | $ 0.71399 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Source |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 120V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 60V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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EPC2110ENGRT is a device with integrated circuits that have become an important tool for many applications. In particular, it is a type of FET (field-effect transistor) and MOSFET (metal-oxide-semiconductor field-effect transistor) array, which has been designed with robustness, high throughput and versatility in mind. This device provides designers with the flexibility to easily reach optimal performance with a variety of applications.
The EPC2110ENGRT is an example of how the advancements in technology have made powerful and reliable devices available for a wide range of applications and projects. With its high-grade components and intelligent design, EPC2110ENGRT offers excellent performance and is suitable for various demanding features. This device features a wide input voltage range, allowing for flexibility with different project needs and budgets.
At the heart of the EPC2110ENGRT is its FET array. This array is composed of several FETs and MOSFETs connected in parallel to provide increased current and voltage handling capabilities. The FET array operates at voltages ranging from 6V to 7V and up to 400mA depending on the configuration of the device. This array offers excellent thermal conductivity, which helps to regulate the temperatures of the device even when under heavy loads.
The EPC2110ENGRT also features an intelligent design that increases the overall efficiency of the device. To improve the switching performance, the EPC2110ENGRT uses feedforward and feedback topologies. This helps to reduce power consumption and improve efficiencies as well. The EPC2110ENGRT also has built-in protection against overcurrent and overvoltage conditions.
The EPC2110ENGRT can be used in a variety of applications. These include but are not limited to everyday consumer products, high power motor controllers, power converters, home appliance controllers, and robotics. The device is also well-suited to industrial controls and displays, automotive systems, and even medical equipment.
The working principle of the EPC2110ENGRT relies on a process called gate control. By applying a voltage across two electrodes on the FET array, an electric field is created that allows for electrical current to flow from one point to another. This creates a control gate, which switches the direction of the current flow. The switching action of the device also provides protection from various forms of interference and noise.
In conclusion, the EPC2110ENGRT is an excellent device for a variety of applications. It is highly versatile with excellent performance for high power applications, and it is also robust and offers good heat dissipation. With its FET array and efficient design, the EPC2110ENGRT is definitely worth considering for any project or application.
The specific data is subject to PDF, and the above content is for reference
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