EPC2010 Discrete Semiconductor Products |
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Allicdata Part #: | 917-1016-2-ND |
Manufacturer Part#: |
EPC2010 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 200V 12A BUMPED DIE |
More Detail: | N-Channel 200V 12A (Ta) Surface Mount Die |
DataSheet: | EPC2010 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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The Enhanced Power Control (EPC) 2010 is a type of integrated power control design that is used to monitor, control, and optimize the efficiency of power circuits. The EPC2010 is designed to make use of the most efficient possible power management components, as well as minimal hardware components. This helps to ensure less power is used when designing power circuits.
The EPC2010 design is based on the PowerFET transistor; a type of Field Effect Transistor (FET) specifically designed for use in power applications. The PowerFET is a superior transistor due to its superior linear characteristics and high current carrying capacity. The EPC2010 is used in many different applications from power monitoring to motor control and inverters. It has become increasingly used due to its low cost and high reliability.
The core functionality of the EPC2010 is largely related to its ability to control the current and voltage output of the power circuits. To do this, the EPC2010 relies on two components; the PowerFET and the control circuit. The PowerFET is responsible for providing the actual power control, while the control circuit provides the logic that is necessary to monitor and control the output. The control circuit is usually built around a microcontroller, allowing for it to run custom instruction sets or \'programs\'.
The PowerFET is a single device that controls the flow of current and voltage output. It is an insulated gate Field Effect Transistor (FET) that utilizes the principle of a \'charge transfer device\'. This means that the FET is capable of manipulating the current and voltage output of its load by controlling the amount of charge that is being transferred through it. The PowerFET\'s gate is used as an input to \'switch\' the device into its operating mode. This is achieved by applying a control voltage to the gate. Depending on the type of PowerFET being used, the control voltage might range from a few volts to several hundred volts.
Once the gate of the PowerFET is activated, the FET begins to regulate the amount of current that is passed through its source and drain leads. This is done by modulating the magnitude of the voltage between the source and the drain. The control circuit is responsible for manipulating this control voltage in order to increase or decrease the current and voltage output of the circuit. This is an important concept as it allows the EPC2010 to monitor and regulate the power output based on the underlying conditions of the circuit.
The EPC2010 is a versatile and reliable device that can be used in a wide variety of applications. It is able to provide highly efficient power control, as well as a significant reduction in hardware costs. This makes it a highly attractive choice for power designers and engineers who need to optimize their power circuit design.
The specific data is subject to PDF, and the above content is for reference
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