EPC2010 Discrete Semiconductor Products |
|
| Allicdata Part #: | 917-1016-2-ND |
| Manufacturer Part#: |
EPC2010 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | EPC |
| Short Description: | TRANS GAN 200V 12A BUMPED DIE |
| More Detail: | N-Channel 200V 12A (Ta) Surface Mount Die |
| DataSheet: | EPC2010 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 3mA |
| Package / Case: | Die |
| Supplier Device Package: | Die |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 100V |
| Vgs (Max): | +6V, -4V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 5V |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 6A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | GaNFET (Gallium Nitride) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The Enhanced Power Control (EPC) 2010 is a type of integrated power control design that is used to monitor, control, and optimize the efficiency of power circuits. The EPC2010 is designed to make use of the most efficient possible power management components, as well as minimal hardware components. This helps to ensure less power is used when designing power circuits.
The EPC2010 design is based on the PowerFET transistor; a type of Field Effect Transistor (FET) specifically designed for use in power applications. The PowerFET is a superior transistor due to its superior linear characteristics and high current carrying capacity. The EPC2010 is used in many different applications from power monitoring to motor control and inverters. It has become increasingly used due to its low cost and high reliability.
The core functionality of the EPC2010 is largely related to its ability to control the current and voltage output of the power circuits. To do this, the EPC2010 relies on two components; the PowerFET and the control circuit. The PowerFET is responsible for providing the actual power control, while the control circuit provides the logic that is necessary to monitor and control the output. The control circuit is usually built around a microcontroller, allowing for it to run custom instruction sets or \'programs\'.
The PowerFET is a single device that controls the flow of current and voltage output. It is an insulated gate Field Effect Transistor (FET) that utilizes the principle of a \'charge transfer device\'. This means that the FET is capable of manipulating the current and voltage output of its load by controlling the amount of charge that is being transferred through it. The PowerFET\'s gate is used as an input to \'switch\' the device into its operating mode. This is achieved by applying a control voltage to the gate. Depending on the type of PowerFET being used, the control voltage might range from a few volts to several hundred volts.
Once the gate of the PowerFET is activated, the FET begins to regulate the amount of current that is passed through its source and drain leads. This is done by modulating the magnitude of the voltage between the source and the drain. The control circuit is responsible for manipulating this control voltage in order to increase or decrease the current and voltage output of the circuit. This is an important concept as it allows the EPC2010 to monitor and regulate the power output based on the underlying conditions of the circuit.
The EPC2010 is a versatile and reliable device that can be used in a wide variety of applications. It is able to provide highly efficient power control, as well as a significant reduction in hardware costs. This makes it a highly attractive choice for power designers and engineers who need to optimize their power circuit design.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| EPC2LC20 | Intel FPGAs/... | -- | 1034 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2025ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 300V 4A BUMPED ... |
| EPC2014C | EPC | -- | 77500 | TRANS GAN 40V 10A BUMPED ... |
| EPC2115ENGRT | EPC | 2.74 $ | 1000 | 150 V GAN IC DUAL FET DRI... |
| EPC2104 | EPC | 3.89 $ | 9500 | TRANS GAN SYMMETRICAL HAL... |
| EPC2TC32N | Intel FPGAs/... | 32.83 $ | 2000 | IC CONFIG DEVICE 1.6MBIT ... |
| PVQ-EPC28 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2021 | EPC | 3.73 $ | 4000 | TRANS GAN 80V 90A BUMPED ... |
| EPC2101 | EPC | 3.81 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2101ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2106 | EPC | -- | 14000 | TRANS GAN SYM 100V BUMPED... |
| EPC2105 | EPC | 3.87 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2LC20EM | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| EPC2022 | EPC | 3.81 $ | 4500 | TRANS GAN 100V 3MOHM BUMP... |
| EPC2203 | EPC | -- | 27500 | GANFET N-CH 80V 1.7A 6SOL... |
| EPC2020 | EPC | 3.67 $ | 5000 | TRANS GAN 60V 90A BUMPED ... |
| EPC2100ENGRT | EPC | 3.75 $ | 6500 | MOSFET 2 N-CH 30V 9.5A/38... |
| EPC2039 | EPC | -- | 135000 | TRANS GAN 80V BUMPED DIEN... |
| EPC2015 | EPC | 0.0 $ | 1000 | TRANS GAN 40V 33A BUMPED ... |
| EPC2016C | EPC | -- | 492500 | TRANS GAN 100V 18A BUMPED... |
| EPC2036 | EPC | -- | 535779 | TRANS GAN 100V 1A BUMPED ... |
| EPC2104ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 100V BUMP... |
| EPC2010 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 12A BUMPED... |
| EPC2100ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 30V BUMPE... |
| EPC2038 | EPC | -- | 180000 | TRANS GAN 100V 2.8OHM BUM... |
| EPC2015C | EPC | -- | 17500 | TRANS GAN 40V 33A BUMPED ... |
| EPC2031ENGRT | EPC | 3.12 $ | 5500 | MOSFET NCH 60V 31A DIEN-C... |
| EPC2XXA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| PVQ-EPC20 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2102ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2102 | EPC | 3.78 $ | 9500 | TRANS GAN SYMMETRICAL HAL... |
| EPC2040 | EPC | 0.48 $ | 1000 | MOSFET NCH 15V 3.4A DIEN-... |
| EPC2001C | EPC | -- | 165000 | TRANS GAN 100V 36A BUMPED... |
| EPC2012C | EPC | -- | 10000 | TRANS GAN 200V 5A BUMPED ... |
| EPC2007C | EPC | 0.71 $ | 35000 | TRANS GAN 100V 6A BUMPED ... |
| EPC2110 | EPC | 0.78 $ | 22500 | MOSFET 2NCH 120V 3.4A DIE... |
| EPC2049ENGRT | EPC | 2.4 $ | 1000 | TRANS GAN 40V BUMPED DIEN... |
| EPC2032ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 100V 48A BUMPED... |
| EPC2TI32N | Intel FPGAs/... | 90.29 $ | 2000 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2103ENGRT | EPC | 3.83 $ | 5000 | TRANS GAN SYM HALF BRDG 8... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
EPC2010 Datasheet/PDF