Allicdata Part #: | 917-EPC2105ENG-ND |
Manufacturer Part#: |
EPC2105ENG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 2N-CH 80V BUMPED DIE |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 3... |
DataSheet: | EPC2105ENG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Part Status: | Discontinued at Digi-Key |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A, 38A |
Rds On (Max) @ Id, Vgs: | 14.5 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 40V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Series: | eGaN® |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
EPC2105ENG Application Field and Working Principle
EPC2105ENG is a high-performance enhancement-mode power field-effect transistor (FET) array. The array consists of two EPC2105EN FETs, which are targeted for high-current, low-voltage switches applications. It is designed for low on-state resistance, high-speed switching and high-voltage breakdown capability.
EPC2105ENG is used in wide range of applications such as power switching, control and regulation of electrical power, battery management, and load switching applications. It has a low on state resistance and high-speed switching capabilites, making it suitable for high-speed power switching applications.
EPC2105ENG is also suitable for applications such as switching voltage regulators. The FETs have very low on-state resistance and high-speed switching capabilities. It has a tight absolute maximum junction temperature, high-power handling capacity, and low gate charge.
Working Principle:EPC2105ENG is an enhancement-mode FET array, which means that the gate voltage must be more positive than the source to turn the device on. When there is a voltage potential between the source and the gate, the channel region of the FET arranges itself between the source and the drain. This in turn creates a low resistance between the source and the drain, allowing current to flow from the source to the drain.
The device has two FETs. The two FETs can be used either in parallel to handle high currents, or can be used in series to limit the current, depending on the application. The FETs also have protection diodes intrinsic to the structure, which provide protection against overvoltages and allow the equipment to work at a higher voltage than it would normally be rated for.
Overall, EPC2105ENG is an efficient and cost effective FET array, ideal for high current, low voltage switching applications. It has a wide operating range and low on-state resistance enables high-speed switching. The FET has protection diodes intrinsic to the structure and offers excellent power handling capabilities.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EPC2023ENG | EPC | 0.0 $ | 1000 | TRANS GAN 30V 60A BUMPED ... |
EPC2038ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V 0.5A BUMPE... |
EPC2020ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 60V 60A BUMPED ... |
EPC2039ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 80V 6.8A BUMPED... |
EPC2025 | EPC | 0.0 $ | 1000 | TRANS GAN 300V 150MO BUMP... |
EPC2016 | EPC | 0.0 $ | 1000 | TRANS GAN 100V 11A BUMPED... |
EPC2018 | EPC | 0.0 $ | 1000 | TRANS GAN 150V 12A BUMPED... |
EPC2037ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V BUMPED DIE... |
EPC2023ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 30V 60A BUMPED ... |
EPC2040ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 15V BUMPED DIEN... |
EPC2007 | EPC | 0.0 $ | 1000 | TRANS GAN 100V 6A BUMPED ... |
EPC2010 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 12A BUMPED... |
EPC2012 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 3A BUMPED ... |
EPC2015 | EPC | 0.0 $ | 1000 | TRANS GAN 40V 33A BUMPED ... |
EPC2032ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 100V 48A BUMPED... |
EPC2033ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 150V 31A BUMPED... |
EPC2034ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 200V 31A BUMPED... |
EPC2036ENGRT | EPC | 0.0 $ | 1000 | MOSFET N-CH 100V 1.7A DIE... |
EPC2050ENGRT | EPC | 2.62 $ | 1000 | TRANS GAN 350V BUMPED DIE... |
EPC2001 | EPC | 2.76 $ | 47000 | TRANS GAN 100V 25A BUMPED... |
EPC2047ENGRT | EPC | 4.24 $ | 1000 | TRANS GAN 200V BUMPED DIE... |
EPC2100ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 30V BUMPE... |
EPC2101ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
EPC2102ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
EPC2103ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
EPC2104ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 100V BUMP... |
EPC2105ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
EPC2107ENGRT | EPC | 0.64 $ | 1000 | TRANS GAN 3N-CH 100V BUMP... |
EPC2LC20EM | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
EPC2LI20NGA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
EPC2XXA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
EPC2202 | EPC | -- | 27500 | GANFET N-CH 80V 18A DIEN-... |
EPC2014 | EPC | 0.69 $ | 9000 | TRANS GAN 40V 10A BUMPED ... |
EPC2203 | EPC | -- | 27500 | GANFET N-CH 80V 1.7A 6SOL... |
EPC2036 | EPC | -- | 535779 | TRANS GAN 100V 1A BUMPED ... |
EPC2035 | EPC | 0.27 $ | 10000 | TRANS GAN 60V 1A BUMPED D... |
EPC2038 | EPC | -- | 180000 | TRANS GAN 100V 2.8OHM BUM... |
EPC2037 | EPC | 0.41 $ | 127500 | TRANS GAN 100V 550MOHM BU... |
EPC2014C | EPC | -- | 77500 | TRANS GAN 40V 10A BUMPED ... |
EPC2039 | EPC | -- | 135000 | TRANS GAN 80V BUMPED DIEN... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...