EPC2105ENG Allicdata Electronics
Allicdata Part #:

917-EPC2105ENG-ND

Manufacturer Part#:

EPC2105ENG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN 2N-CH 80V BUMPED DIE
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 3...
DataSheet: EPC2105ENG datasheetEPC2105ENG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Part Status: Discontinued at Digi-Key
FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V
Power - Max: --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Series: eGaN®
Packaging: Bulk 
Description

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EPC2105ENG Application Field and Working Principle

EPC2105ENG is a high-performance enhancement-mode power field-effect transistor (FET) array. The array consists of two EPC2105EN FETs, which are targeted for high-current, low-voltage switches applications. It is designed for low on-state resistance, high-speed switching and high-voltage breakdown capability.

EPC2105ENG is used in wide range of applications such as power switching, control and regulation of electrical power, battery management, and load switching applications. It has a low on state resistance and high-speed switching capabilites, making it suitable for high-speed power switching applications.

EPC2105ENG is also suitable for applications such as switching voltage regulators. The FETs have very low on-state resistance and high-speed switching capabilities. It has a tight absolute maximum junction temperature, high-power handling capacity, and low gate charge.

Working Principle:EPC2105ENG is an enhancement-mode FET array, which means that the gate voltage must be more positive than the source to turn the device on. When there is a voltage potential between the source and the gate, the channel region of the FET arranges itself between the source and the drain. This in turn creates a low resistance between the source and the drain, allowing current to flow from the source to the drain.

The device has two FETs. The two FETs can be used either in parallel to handle high currents, or can be used in series to limit the current, depending on the application. The FETs also have protection diodes intrinsic to the structure, which provide protection against overvoltages and allow the equipment to work at a higher voltage than it would normally be rated for.

Overall, EPC2105ENG is an efficient and cost effective FET array, ideal for high current, low voltage switching applications. It has a wide operating range and low on-state resistance enables high-speed switching. The FET has protection diodes intrinsic to the structure and offers excellent power handling capabilities.

The specific data is subject to PDF, and the above content is for reference

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