EPC2105 Allicdata Electronics

EPC2105 Discrete Semiconductor Products

Allicdata Part #:

917-1185-2-ND

Manufacturer Part#:

EPC2105

Price: $ 3.87
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN ASYMMETRICAL HALF BRID
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 3...
DataSheet: EPC2105 datasheetEPC2105 Datasheet/PDF
Quantity: 10000
500 +: $ 3.51491
Stock 10000Can Ship Immediately
$ 3.87
Specifications
Series: eGaN®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V, 1100pF @ 40V
Power - Max: --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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Introduction

The EPC2105 is a state-of-the-art power device that is specifically designed for high efficiency applications. It combines both low resistance and low capacitance, which enables it to deliver high power with minimal distortion. The EPC2105 is also highly resistant to voltage transient spikes, and its advanced features make it one of the most desirable power devices for a variety of applications.

Application Field of EPC2105

The EPC2105 is a power device that is ideal for a variety of applications. It is used in automotive, consumer and industrial electronics, as well as in telecommunications.

The EPC2105 can be used in automotive applications, such as automotive charging systems, automotive communication systems and automotive lighting systems. The low on-resistance and low capacitance make the device particularly suitable for these applications.

In consumer and industrial applications, the EPC2105 is used for precision power regulation, audio and video equipment, embedded systems, and computer systems. The low impedance characteristics of the device make it well suited for these applications.

In telecommunications, the EPC2105 is used in DSL (digital subscriber line) boxes, Internet Protocol (IP) Telephony systems, Wi-Fi and Power over Ethernet (PoE) systems, and wireline access systems. Due to its high power capability, EPC2105 is an excellent choice for these applications.

Working Principle of EPC2105

The EPC2105 is an advanced FET array that uses high frequency, low resistance and low capacitance technology. The device is composed of three MOSFETs, which are connected in parallel to one another. The parallel connection allows for high current handling capacity. The low impedance characteristics of the device enable it to deliver high power with minimal distortion.

The EPC2105 is designed with a built-in protection feature that is designed to limit the current and voltage for both the positive and negative sides. This feature is designed to ensure that the device is not damaged by transient voltage spikes or over-current conditions, as well as to protect other connected components from damage.

The device is designed with an integrated circuit that combines all the features of the device into one package. This IC includes a temperature sensor, a voltage regulator, and a monitor to protect against over-voltage and over-current conditions.

Conclusion

The EPC2105 is an advanced power device that is specifically designed for high efficiency applications. It combines low resistance and low capacitance, as well as several integrated circuits, to deliver high power with minimal distortion. The device is highly suitable for automotive, consumer, industrial, and telecommunications applications. The built-in protection feature ensures that the device is not damaged by transient voltage spikes and over-current conditions, and it also protects against over-voltage and over-current conditions.

The specific data is subject to PDF, and the above content is for reference

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