EPC2106 Discrete Semiconductor Products

Series:	eGaN®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	1.7A
Rds On (Max) @ Id, Vgs:	70 mOhm @ 2A, 5V
Vgs(th) (Max) @ Id:	2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:	0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	75pF @ 50V
Power - Max:	--
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

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The EPC2106 is a type of field-effect transistor (FET) designed to allow for high current at low input power, making it an ideal device for use with internal circuits, particularly for switched mode power supplies (SMPS). The device is classified as a metal-oxide semiconductor field-effect transistor (MOSFET), and is an array type (which generally allows for simpler circuitry).EPC2106 FETs contain two source terminals, a drain terminal, and a gate terminal. The source and drain are typically designated as the negative and positive terminals, respectively, while the gate connects to a control voltage. The FET uses a negatively charged gate terminal to draw a potential difference between the two source terminals, allowing or prohibiting current between them. This type of FET differs from its junction-field-effect counterparts in that it operates with a much greater degree of efficiency, depending on the control voltage.The EPC2106 device is an enhancement mode MOSFET, meaning that it operates at a low impedance value (i.e., high current) when the gate voltage is higher than the source voltage. Conversely, when the gate voltage system is at the same voltage as the source, the impedance of the device is high, preventing any current flow. As such, the device allows for a control system to be used to provide a high current output at a very low input power requirement.One of the most common applications of the EPC2106 is in SMPS circuits, as its properties make it ideal for controlling power levels. These FETs can be used with high input voltages, yet still maintain low power consumption, allowing for efficient power delivery to various points in the system. Additionally, the array type MOSFETs are more robust than the single-transistor counterparts, making them more suited for use in SMPS applications.In addition to being used in SMPS circuits, the EPC2106 FETs are also a common choice for use in RF amplifiers and switches. The high speed switching and low input power requirements that this device provides makes it suitable for switching between different frequency signals, or amplifying radio signals. Additionally, the EPC2106 device is often employed in many low-voltage signal applications due to its low-noise properties and its ability to dissipate energy without generating significant heat.As with most types of FETs, the EPC2106 device is also used in a wide range of other applications. It is commonly utilized in memory chips, microprocessors, and oscillators, as well as motor drive controllers and motor speed controllers. In many cases, the EPC2106 device can provide a cost-efficient alternative to the use of other types of FETs (such as MOSFETs, JFETs, and BJTs).Overall, the EPC2106 device is an ideal choice for a wide range of applications, due to its low input power requirement, high current capacity, and robust array design. Its ability to provide consistent current and voltage levels can be used to effectively regulate power and energy in a wide variety of circuits. Additionally, the device’s array design provides for simpler circuitry, making it easier to integrate into many applications. Ultimately, the EPC2106 device is an excellent choice for those who are looking for an efficient and reliable power control solution.

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