EPC2108ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2108ENGRTR-ND |
Manufacturer Part#: |
EPC2108ENGRT |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 3N-CH BUMPED DIE |
More Detail: | Mosfet Array 3 N-Channel (Half Bridge + Synchronou... |
DataSheet: | EPC2108ENGRT Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.57707 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 60V, 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.22nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 30V, 7pF @ 30V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 9-VFBGA |
Supplier Device Package: | 9-BGA (1.35x1.35) |
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EPC2108ENGRT is a power transistor array chip designed by Efficient Power Conversion (EPC). This chip, the result of many years of research into power semiconductor engineering and transistors, is used for high-power applications that involve pulse switching, high voltage, and high current. The EPC2108ENGRT is a power transistor array which allows designers to control higher switching frequencies with fewer parts, save on board space, and offers better efficiency for their designs.
The EPC2108ENGRT is an array of 10 N-Channel Enhanced Power Transistors, or EN-FETs. The EN-FETs are field-effect transistors (FETs) which are designed to have low on-state resistance and low power loss characteristics. They are also designed to be temperature resistant, making them suitable for use in high-temperature environments. The EN-FETs are manufactured on a single chip and come with a wide range of built-in features that make them suitable for many types of high-power applications.
The array is normally arranged into four groups. Each group has two transistors in each array, resulting in a total of eight transistors. The EN-FETs also feature two enable pins, two gate pins, and two source pins. Each enable pin is used to activate one of the transistors in the array while the gate pins are used to control the gate voltage of each transistor. The source pins can be used to connect to an external power source. The gate voltage, in turn, determines the on-state resistance and power dissipation of the transistor array.
The design of the array allows designers to control the on-state resistance and power dissipation of each array without having to use multiple components. This helps reduce the overall board space that is needed. In addition, the EN-FETs allow high switching frequencies, which helps reduce the amount of time that switching takes place. The array is also able to reduce the amount of power that is used during operation. The combination of these benefits make the EPC2108ENGRT an appealing option for designers looking for an efficient solution for their power needs.
The EPC2108ENGRT is an ideal choice for many types of high-power applications. It offers low on-state resistance, temperature resistance, and high switching frequencies which helps reduce the amount of power being used and board space needed. The transistors offer designers an efficient solution for controlling higher switching frequencies with fewer parts. The array is also able to reduce power dissipation, making it an ideal choice for designers looking for an efficient solution for their power needs.
The specific data is subject to PDF, and the above content is for reference
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