EPC2015C Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 9mA
Package / Case:	Die
Supplier Device Package:	Die
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	980pF @ 20V
Vgs (Max):	+6V, -4V
Gate Charge (Qg) (Max) @ Vgs:	8.7nC @ 5V
Series:	eGaN®
Rds On (Max) @ Id, Vgs:	4 mOhm @ 33A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	53A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	GaNFET (Gallium Nitride)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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EPC2015C Application Field and Working Principle

EPC2015C is a single Enhancement-mode Field-Effect Transistor (FET) which is suitable for a wide array of applications in both analog and switching circuits. It is a contemporary MOSFET making use of both enhancement and depletion mode technologies, thereby allowing for higher efficiency, lower power dissipation, and rapid switching speed. In this article, we will analyze the application field of EPC2015C and discuss its basic working principle.

EPC2015C Application Field

EPC2015C can be used in various analog and digital applications, such as power switching circuits, power management, and radio frequency (RF) power amplifiers. It is suitable for a wide operating temperature range (from -55°C to 125°C), and its maximum drain-source breakdown voltage can reach up to 100V.In addition, its specifications are appropriate for low to medium-power switching and amplifier applications. In particular, this FET offers minimum linearity and low on-state resistance of only 0.11Ω to 0.26Ω over a 200 mV drain-source voltage range. This makes EPC2015C an ideal choice for applications such as battery-powered portable devices.

EPC2015C Working Principle

The construction of EPC2015C contains a source, a drain, and a gate. It is a vertical MOSFET which behaves as a voltage-controlled field-effect transistor and, therefore, its electrical behavior is dependent on the gate-source voltage.The gate-source voltage is the main controlling element of EPC2015C, allowing the changes of the drain-source current without the need for an external bias resistor.This FET operates in the enhancement mode, which means that the gate-source voltage needs to be positive in order to open the drain-source channel and permit current to flow.When operating in the depletion mode, the drain-source current is completely determined by the gate-source voltage, enabling easy control of the drain current.

Conclusion

EPC2015C is a Single Enhancement-mode Field-Effect Transistor (FET) which can be used in various analog and RF applications, such as power switching circuits and amplifiers, with excellent linearity and on-state resistance. Its drain-source breakdown voltage is also good, reaching values up to 100V. Its electrical behavior is mainly dependent on the gate-source voltage, as it operates both in the enhancement and depletion modes.

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