EPC2106ENGRT Discrete Semiconductor Products |
|
| Allicdata Part #: | 917-EPC2106ENGRTR-ND |
| Manufacturer Part#: |
EPC2106ENGRT |
| Price: | $ 0.60 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | EPC |
| Short Description: | TRANS GAN 2N-CH 100V BUMPED DIE |
| More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A ... |
| DataSheet: | EPC2106ENGRT Datasheet/PDF |
| Quantity: | 17500 |
| 2500 +: | $ 0.54772 |
| Series: | eGaN® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.73nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 50V |
| Power - Max: | -- |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EPC2106ENGRT is a transistor array designed to provide high performance output and low thermal impedance. It is generally used in applications that require a large amount of power with very little heat loss. The EPC2106ENGRT is an advanced array of transistors that is capable of providing excellent performance in high frequency applications such as radio frequency (RF) and amplifier circuits.
At the heart of the device is a series of transistors. These transistors are used to create a large signal gain, which is needed to drive larger currents than are capable with single transistors. These transistors are highly efficient and low power, allowing for maximum performance at low power consumption.
The EPC2106ENGRT is a FET array, which stands for field effect transistors. FETs are transistors that allow current to flow freely in one direction, while blocking current in the opposite direction. This is achieved by the control of a gate-voltage, which acts as an electronic switch to control the current flow. The gate voltage can be controlled by the input of an electrical signal.
The EPC2106ENGRT also has a high-speed gate drive circuit, which is designed to ensure fast switching times. The gate drive circuit can also be programmed to provide additional protection, such as fault protection or additional drive levels. This allows the device to be used in applications that require a high switching frequency, such as RF applications.
In addition to the main components, the EPC2106ENGRT also includes a number of other features. These features allow for improved performance and greater control over the device. For example, the device includes a latch-off circuit which allows for the device to be configured in a safe operational mode. This prevents the device from unintentionally entering an unsafe operational condition due to external influences.
The other features of the EPC2106ENGRT include a wide range of temperature operation, a large number of channels, high speed response and a high current handling capacity. These features make the EPC2106ENGRT ideal for applications that require high speed and high power output, such as amplifiers and RF circuits. Furthermore, the device is also capable of handling a large amount of power, making it suitable for high power applications.
Overall, the EPC2106ENGRT is an advanced transistor array that provides a high level of performance and low thermal impedance. It is well suited for a wide range of applications, from radio frequency and amplifier applications, to high power applications. The device is highly efficient and low power, making it an excellent choice for power sensitive applications. Furthermore, the device is highly reliable and can handle a large amount of power, making it suitable for high power applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| EPC2LC20 | Intel FPGAs/... | -- | 1034 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2025ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 300V 4A BUMPED ... |
| EPC2014C | EPC | -- | 77500 | TRANS GAN 40V 10A BUMPED ... |
| EPC2115ENGRT | EPC | 2.74 $ | 1000 | 150 V GAN IC DUAL FET DRI... |
| EPC2104 | EPC | 3.89 $ | 9500 | TRANS GAN SYMMETRICAL HAL... |
| EPC2TC32N | Intel FPGAs/... | 32.83 $ | 2000 | IC CONFIG DEVICE 1.6MBIT ... |
| PVQ-EPC28 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2021 | EPC | 3.73 $ | 4000 | TRANS GAN 80V 90A BUMPED ... |
| EPC2101 | EPC | 3.81 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2101ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2106 | EPC | -- | 14000 | TRANS GAN SYM 100V BUMPED... |
| EPC2105 | EPC | 3.87 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2LC20EM | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| EPC2022 | EPC | 3.81 $ | 4500 | TRANS GAN 100V 3MOHM BUMP... |
| EPC2203 | EPC | -- | 27500 | GANFET N-CH 80V 1.7A 6SOL... |
| EPC2020 | EPC | 3.67 $ | 5000 | TRANS GAN 60V 90A BUMPED ... |
| EPC2100ENGRT | EPC | 3.75 $ | 6500 | MOSFET 2 N-CH 30V 9.5A/38... |
| EPC2039 | EPC | -- | 135000 | TRANS GAN 80V BUMPED DIEN... |
| EPC2015 | EPC | 0.0 $ | 1000 | TRANS GAN 40V 33A BUMPED ... |
| EPC2016C | EPC | -- | 492500 | TRANS GAN 100V 18A BUMPED... |
| EPC2036 | EPC | -- | 535779 | TRANS GAN 100V 1A BUMPED ... |
| EPC2104ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 100V BUMP... |
| EPC2010 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 12A BUMPED... |
| EPC2100ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 30V BUMPE... |
| EPC2038 | EPC | -- | 180000 | TRANS GAN 100V 2.8OHM BUM... |
| EPC2015C | EPC | -- | 17500 | TRANS GAN 40V 33A BUMPED ... |
| EPC2031ENGRT | EPC | 3.12 $ | 5500 | MOSFET NCH 60V 31A DIEN-C... |
| EPC2XXA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| PVQ-EPC20 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2102ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2102 | EPC | 3.78 $ | 9500 | TRANS GAN SYMMETRICAL HAL... |
| EPC2040 | EPC | 0.48 $ | 1000 | MOSFET NCH 15V 3.4A DIEN-... |
| EPC2001C | EPC | -- | 165000 | TRANS GAN 100V 36A BUMPED... |
| EPC2012C | EPC | -- | 10000 | TRANS GAN 200V 5A BUMPED ... |
| EPC2007C | EPC | 0.71 $ | 35000 | TRANS GAN 100V 6A BUMPED ... |
| EPC2110 | EPC | 0.78 $ | 22500 | MOSFET 2NCH 120V 3.4A DIE... |
| EPC2049ENGRT | EPC | 2.4 $ | 1000 | TRANS GAN 40V BUMPED DIEN... |
| EPC2032ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 100V 48A BUMPED... |
| EPC2TI32N | Intel FPGAs/... | 90.29 $ | 2000 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2103ENGRT | EPC | 3.83 $ | 5000 | TRANS GAN SYM HALF BRDG 8... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
EPC2106ENGRT Datasheet/PDF