EPC2106ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2106ENGRTR-ND |
Manufacturer Part#: |
EPC2106ENGRT |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 2N-CH 100V BUMPED DIE |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A ... |
DataSheet: | EPC2106ENGRT Datasheet/PDF |
Quantity: | 17500 |
2500 +: | $ 0.54772 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.73nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 50V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The EPC2106ENGRT is a transistor array designed to provide high performance output and low thermal impedance. It is generally used in applications that require a large amount of power with very little heat loss. The EPC2106ENGRT is an advanced array of transistors that is capable of providing excellent performance in high frequency applications such as radio frequency (RF) and amplifier circuits.
At the heart of the device is a series of transistors. These transistors are used to create a large signal gain, which is needed to drive larger currents than are capable with single transistors. These transistors are highly efficient and low power, allowing for maximum performance at low power consumption.
The EPC2106ENGRT is a FET array, which stands for field effect transistors. FETs are transistors that allow current to flow freely in one direction, while blocking current in the opposite direction. This is achieved by the control of a gate-voltage, which acts as an electronic switch to control the current flow. The gate voltage can be controlled by the input of an electrical signal.
The EPC2106ENGRT also has a high-speed gate drive circuit, which is designed to ensure fast switching times. The gate drive circuit can also be programmed to provide additional protection, such as fault protection or additional drive levels. This allows the device to be used in applications that require a high switching frequency, such as RF applications.
In addition to the main components, the EPC2106ENGRT also includes a number of other features. These features allow for improved performance and greater control over the device. For example, the device includes a latch-off circuit which allows for the device to be configured in a safe operational mode. This prevents the device from unintentionally entering an unsafe operational condition due to external influences.
The other features of the EPC2106ENGRT include a wide range of temperature operation, a large number of channels, high speed response and a high current handling capacity. These features make the EPC2106ENGRT ideal for applications that require high speed and high power output, such as amplifiers and RF circuits. Furthermore, the device is also capable of handling a large amount of power, making it suitable for high power applications.
Overall, the EPC2106ENGRT is an advanced transistor array that provides a high level of performance and low thermal impedance. It is well suited for a wide range of applications, from radio frequency and amplifier applications, to high power applications. The device is highly efficient and low power, making it an excellent choice for power sensitive applications. Furthermore, the device is highly reliable and can handle a large amount of power, making it suitable for high power applications.
The specific data is subject to PDF, and the above content is for reference
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