EPC2023ENG Allicdata Electronics
Allicdata Part #:

917-EPC2023ENG-ND

Manufacturer Part#:

EPC2023ENG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN 30V 60A BUMPED DIE
More Detail: N-Channel 30V 60A (Ta) Surface Mount Die
DataSheet: EPC2023ENG datasheetEPC2023ENG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Package / Case: Die
Supplier Device Package: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
Vgs (Max): +6V, -4V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: eGaN®
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 40A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The EPC2023ENG is a modern linear Power MOSFET transistor that is a single channel device with a 3-terminal gate, drain, and source. The transistor was developed by Efficient Power Conversion Corporation, a leading electronics semiconductor company. It is widely used in applications such as audio crossover networks, power amplifiers, power supplies, and many other applications. This article will discuss the application field and working principle of the EPC2023ENG.

The EPC2023ENG is a 60V power MOSFET transistor with a maximum drain-source resistance of 12mΩ, a maximum gate threshold voltage of 1.5V, and a maximum drain current of 28A. Its low gate threshold voltage and drain-source resistance make it ideal for high current applications. This transistor can be used in a variety of applications such as audio crossover networks where high power transistors are needed because of their high gain, power amplifiers, power supplies, motor controllers, and other high-current applications. The EPC2023ENG is also used in battery chargers and inverters.

The working principle of the EPC2023ENG is based on a metal oxide silicon field effect transistor (MOSFET). This is a three-terminal device which consists of a gate, drain and source. A potential difference is applied between the gate and the source, and this generates a field in the semiconductor material which controls current flow between the drain and the source. In the EPC2023ENG, the base gate voltage is 1.5V at a drain current of 28A. This gate voltage allows for the high current to be switched in the transistor when the gate voltage is present and prevents it from passing when the gate voltage is absent.

The EPC2023ENG has many advantages compared to other MOSFET transistors. It has a low gate threshold voltage which reduces conduction losses, allowing for a higher current carrying capacity. Additionally, the low on-state resistance allows the transistor to operate at a higher frequency compared to other transistors. This makes it suitable for applications such as audio crossover networks, power amplifiers, and power supplies. Furthermore, the EPC2023ENG outperforms other MOSFET transistors with its low on-state and gate-threshold voltages, making it an ideal choice for applications where cost and power efficiency are important.

In conclusion, the EPC2023ENG is a modern, linear power MOSFET transistor which is a single channel device with a 3-terminal gate, drain, and source. This transistor can be used in many applications such as audio crossover networks, power amplifiers, power supplies, and motor controllers. Its low gate threshold voltage, drain-source resistance, and high current carrying capacity make it ideal for these high current applications. Additionally, its low on-state and gate threshold voltages make it an ideal choice for cost and power efficiency. There is no doubt that this is an essential device for many different industries and applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "EPC2" Included word is 40
Part Number Manufacturer Price Quantity Description
EPC2111 EPC -- 22500 TRANS GAN ASYMMETRICAL HA...
EPC2038ENGR EPC 0.0 $ 1000 TRANS GAN 100V 0.5A BUMPE...
EPC2024 EPC 3.62 $ 6000 MOSFET NCH 40V 60A DIEN-C...
EPC2031ENGRT EPC 3.12 $ 5500 MOSFET NCH 60V 31A DIEN-C...
PVQ-EPC20 Panduit Corp 103.61 $ 1000 PANVIEW IQ EXPANSION PORT...
EPC2LI20N Intel FPGAs/... 73.88 $ 1000 IC CONFIG DEVICE 1.6MBIT ...
EPC2LI20NGA Intel FPGAs/... 0.0 $ 1000 IC FPGA FBGA
EPC2051ENGRT EPC 0.41 $ 2500 TRANS GAN 100V DIE CU PIL...
EPC2032 EPC 3.23 $ 8000 TRANS GAN 100V 48A BUMPED...
EPC2100 EPC 3.75 $ 7500 TRANS GAN ASYMMETRICAL HA...
EPC2023ENGR EPC 0.0 $ 1000 TRANS GAN 30V 60A BUMPED ...
EPC2108ENGRT EPC 0.64 $ 2500 TRANS GAN 3N-CH BUMPED DI...
EPC2105ENG EPC 0.0 $ 1000 TRANS GAN 2N-CH 80V BUMPE...
EPC2001 EPC 2.76 $ 47000 TRANS GAN 100V 25A BUMPED...
EPC2102ENGRT EPC 3.78 $ 6500 MOSFET 2 N-CHANNEL 60V 23...
EPC2023ENG EPC 0.0 $ 1000 TRANS GAN 30V 60A BUMPED ...
EPC2036 EPC -- 535779 TRANS GAN 100V 1A BUMPED ...
EPC2104ENG EPC 0.0 $ 1000 TRANS GAN 2N-CH 100V BUMP...
EPC2015C EPC -- 17500 TRANS GAN 40V 33A BUMPED ...
EPC2LC20EM Intel FPGAs/... 0.0 $ 1000 IC FPGA FBGA
EPC2022 EPC 3.81 $ 4500 TRANS GAN 100V 3MOHM BUMP...
EPC2106 EPC -- 14000 TRANS GAN SYM 100V BUMPED...
EPC2105 EPC 3.87 $ 10000 TRANS GAN ASYMMETRICAL HA...
EPC2025ENGR EPC 0.0 $ 1000 TRANS GAN 300V 4A BUMPED ...
EPC2LC20 Intel FPGAs/... -- 1034 IC CONFIG DEVICE 1.6MBIT ...
EPC2015 EPC 0.0 $ 1000 TRANS GAN 40V 33A BUMPED ...
EPC2039 EPC -- 135000 TRANS GAN 80V BUMPED DIEN...
EPC2010 EPC 0.0 $ 1000 TRANS GAN 200V 12A BUMPED...
EPC2038 EPC -- 180000 TRANS GAN 100V 2.8OHM BUM...
EPC2100ENG EPC 0.0 $ 1000 TRANS GAN 2N-CH 30V BUMPE...
EPC2037ENGR EPC 0.0 $ 1000 TRANS GAN 100V BUMPED DIE...
EPC2115ENGRT EPC 2.74 $ 1000 150 V GAN IC DUAL FET DRI...
EPC2025 EPC 0.0 $ 1000 TRANS GAN 300V 150MO BUMP...
EPC2034ENGRT EPC 0.0 $ 1000 TRANS GAN 200V 31A BUMPED...
EPC2014C EPC -- 77500 TRANS GAN 40V 10A BUMPED ...
PVQ-EPC28 Panduit Corp 103.61 $ 1000 PANVIEW IQ EXPANSION PORT...
EPC2019 EPC -- 11000 TRANS GAN 200V 8.5A BUMPE...
EPC2106ENGRT EPC 0.6 $ 17500 TRANS GAN 2N-CH 100V BUMP...
EPC2110ENGRT EPC 0.78 $ 12500 TRANS GAN 2N-CH 120V BUMP...
EPC2TC32 Intel FPGAs/... -- 263 IC CONFIG DEVICE 1.6MBIT ...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics