Allicdata Part #: | 917-EPC2023ENG-ND |
Manufacturer Part#: |
EPC2023ENG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 30V 60A BUMPED DIE |
More Detail: | N-Channel 30V 60A (Ta) Surface Mount Die |
DataSheet: | EPC2023ENG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | eGaN® |
Packaging: | Tray |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 40A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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The EPC2023ENG is a modern linear Power MOSFET transistor that is a single channel device with a 3-terminal gate, drain, and source. The transistor was developed by Efficient Power Conversion Corporation, a leading electronics semiconductor company. It is widely used in applications such as audio crossover networks, power amplifiers, power supplies, and many other applications. This article will discuss the application field and working principle of the EPC2023ENG.
The EPC2023ENG is a 60V power MOSFET transistor with a maximum drain-source resistance of 12mΩ, a maximum gate threshold voltage of 1.5V, and a maximum drain current of 28A. Its low gate threshold voltage and drain-source resistance make it ideal for high current applications. This transistor can be used in a variety of applications such as audio crossover networks where high power transistors are needed because of their high gain, power amplifiers, power supplies, motor controllers, and other high-current applications. The EPC2023ENG is also used in battery chargers and inverters.
The working principle of the EPC2023ENG is based on a metal oxide silicon field effect transistor (MOSFET). This is a three-terminal device which consists of a gate, drain and source. A potential difference is applied between the gate and the source, and this generates a field in the semiconductor material which controls current flow between the drain and the source. In the EPC2023ENG, the base gate voltage is 1.5V at a drain current of 28A. This gate voltage allows for the high current to be switched in the transistor when the gate voltage is present and prevents it from passing when the gate voltage is absent.
The EPC2023ENG has many advantages compared to other MOSFET transistors. It has a low gate threshold voltage which reduces conduction losses, allowing for a higher current carrying capacity. Additionally, the low on-state resistance allows the transistor to operate at a higher frequency compared to other transistors. This makes it suitable for applications such as audio crossover networks, power amplifiers, and power supplies. Furthermore, the EPC2023ENG outperforms other MOSFET transistors with its low on-state and gate-threshold voltages, making it an ideal choice for applications where cost and power efficiency are important.
In conclusion, the EPC2023ENG is a modern, linear power MOSFET transistor which is a single channel device with a 3-terminal gate, drain, and source. This transistor can be used in many applications such as audio crossover networks, power amplifiers, power supplies, and motor controllers. Its low gate threshold voltage, drain-source resistance, and high current carrying capacity make it ideal for these high current applications. Additionally, its low on-state and gate threshold voltages make it an ideal choice for cost and power efficiency. There is no doubt that this is an essential device for many different industries and applications.
The specific data is subject to PDF, and the above content is for reference
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