EPC2007C Discrete Semiconductor Products |
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Allicdata Part #: | 917-1081-2-ND |
Manufacturer Part#: |
EPC2007C |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 100V 6A BUMPED DIE |
More Detail: | N-Channel 100V 6A (Ta) Surface Mount Die Outline ... |
DataSheet: | EPC2007C Datasheet/PDF |
Quantity: | 35000 |
2500 +: | $ 0.64553 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die Outline (5-Solder Bar) |
Package / Case: | Die |
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The EPC2007C is a MOSFET transistor manufactured by Efficient Power Conversion Corporation. It is a single Transistor FET (Field Effect Transistor), meaning that it is a single FET device with three terminals; the gate, source, and drain. This transistor is a high-voltage, high-current device that operates in a reverse polarity, meaning that in order for the transistor to be "on" the gate needs to be more negative than the source. It is designed specifically for applications in which high-performance, low power dissipation, and thermal resistance are important.
The EPC2007C is most commonly used for power supply, power amplifier, and motor control applications. It is highly efficient, as it features low gate charge and low on-resistance. The EPC2007C is also extremely durable, with its high-power, high- surge capabilities, and long lifetime. It has high-side and low-side bandwidths, allowing it to be used in either type of circuit. Furthermore, it has built-in protection against reverse current, short circuits, and current leakage.
The EPC2007C has a working principle called ‘Vertical Double-Diffused Metal Oxide Semiconductor Field Effect Transistor’ (VDMOSFET). This means that the transistor has two layers of metal oxide semiconductor (MOS) material, with source, gate and drain connections. The metal oxide semiconductor creates an interface between the source and the gate, and the interface is used to control the amount of current that passes through the transistor. This layer also helps to maintain the voltage within the transistor, so as to reduce any issues with over-voltage. The gate is used to allow current to flow through the channel, while the source and drain control the current movement.
The EPC2007C also features a high-power, high-current operation. This is beneficial for applications in which a higher current is required. The high-current capability also ensures that the transistor does not burn out due to an excessive current. The high-voltage operation also helps to increase the performance of the transistor. Its high-voltage capabilities are perfect for applications such as voltage-regulators and motor-control units.
In conclusion, the EPC2007C is a single transistor FET (field effect transistor) manufactured by Efficient Power Conversion Corporation. It is ideal for applications where high performance, low power dissipation, and thermal resistance are needed. It has a working principle of vertical double-diffused metal oxide semiconductor field effect transistor (VDMOSFET) and features high-power, high- current, and high-voltage capabilities. This makes it suitable for power supply, power amplifier, and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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