EPC2007C Discrete Semiconductor Products |
|
| Allicdata Part #: | 917-1081-2-ND |
| Manufacturer Part#: |
EPC2007C |
| Price: | $ 0.71 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | EPC |
| Short Description: | TRANS GAN 100V 6A BUMPED DIE |
| More Detail: | N-Channel 100V 6A (Ta) Surface Mount Die Outline ... |
| DataSheet: | EPC2007C Datasheet/PDF |
| Quantity: | 34978 |
| 2500 +: | $ 0.64553 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1.2mA |
| Package / Case: | Die |
| Supplier Device Package: | Die Outline (5-Solder Bar) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 50V |
| Vgs (Max): | +6V, -4V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 5V |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | GaNFET (Gallium Nitride) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EPC2007C is a MOSFET transistor manufactured by Efficient Power Conversion Corporation. It is a single Transistor FET (Field Effect Transistor), meaning that it is a single FET device with three terminals; the gate, source, and drain. This transistor is a high-voltage, high-current device that operates in a reverse polarity, meaning that in order for the transistor to be "on" the gate needs to be more negative than the source. It is designed specifically for applications in which high-performance, low power dissipation, and thermal resistance are important.
The EPC2007C is most commonly used for power supply, power amplifier, and motor control applications. It is highly efficient, as it features low gate charge and low on-resistance. The EPC2007C is also extremely durable, with its high-power, high- surge capabilities, and long lifetime. It has high-side and low-side bandwidths, allowing it to be used in either type of circuit. Furthermore, it has built-in protection against reverse current, short circuits, and current leakage.
The EPC2007C has a working principle called ‘Vertical Double-Diffused Metal Oxide Semiconductor Field Effect Transistor’ (VDMOSFET). This means that the transistor has two layers of metal oxide semiconductor (MOS) material, with source, gate and drain connections. The metal oxide semiconductor creates an interface between the source and the gate, and the interface is used to control the amount of current that passes through the transistor. This layer also helps to maintain the voltage within the transistor, so as to reduce any issues with over-voltage. The gate is used to allow current to flow through the channel, while the source and drain control the current movement.
The EPC2007C also features a high-power, high-current operation. This is beneficial for applications in which a higher current is required. The high-current capability also ensures that the transistor does not burn out due to an excessive current. The high-voltage operation also helps to increase the performance of the transistor. Its high-voltage capabilities are perfect for applications such as voltage-regulators and motor-control units.
In conclusion, the EPC2007C is a single transistor FET (field effect transistor) manufactured by Efficient Power Conversion Corporation. It is ideal for applications where high performance, low power dissipation, and thermal resistance are needed. It has a working principle of vertical double-diffused metal oxide semiconductor field effect transistor (VDMOSFET) and features high-power, high- current, and high-voltage capabilities. This makes it suitable for power supply, power amplifier, and motor control applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| EPC2LC20 | Intel FPGAs/... | -- | 1034 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2025ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 300V 4A BUMPED ... |
| EPC2014C | EPC | -- | 77500 | TRANS GAN 40V 10A BUMPED ... |
| EPC2115ENGRT | EPC | 2.74 $ | 1000 | 150 V GAN IC DUAL FET DRI... |
| EPC2104 | EPC | 3.89 $ | 9500 | TRANS GAN SYMMETRICAL HAL... |
| EPC2TC32N | Intel FPGAs/... | 32.83 $ | 2000 | IC CONFIG DEVICE 1.6MBIT ... |
| PVQ-EPC28 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2021 | EPC | 3.73 $ | 4000 | TRANS GAN 80V 90A BUMPED ... |
| EPC2101 | EPC | 3.81 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2101ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2106 | EPC | -- | 14000 | TRANS GAN SYM 100V BUMPED... |
| EPC2105 | EPC | 3.87 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2LC20EM | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| EPC2022 | EPC | 3.81 $ | 4500 | TRANS GAN 100V 3MOHM BUMP... |
| EPC2203 | EPC | -- | 27500 | GANFET N-CH 80V 1.7A 6SOL... |
| EPC2020 | EPC | 3.67 $ | 5000 | TRANS GAN 60V 90A BUMPED ... |
| EPC2100ENGRT | EPC | 3.75 $ | 6500 | MOSFET 2 N-CH 30V 9.5A/38... |
| EPC2039 | EPC | -- | 135000 | TRANS GAN 80V BUMPED DIEN... |
| EPC2015 | EPC | 0.0 $ | 1000 | TRANS GAN 40V 33A BUMPED ... |
| EPC2016C | EPC | -- | 492500 | TRANS GAN 100V 18A BUMPED... |
| EPC2036 | EPC | -- | 535779 | TRANS GAN 100V 1A BUMPED ... |
| EPC2104ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 100V BUMP... |
| EPC2010 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 12A BUMPED... |
| EPC2100ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 30V BUMPE... |
| EPC2038 | EPC | -- | 180000 | TRANS GAN 100V 2.8OHM BUM... |
| EPC2015C | EPC | -- | 17500 | TRANS GAN 40V 33A BUMPED ... |
| EPC2031ENGRT | EPC | 3.12 $ | 5500 | MOSFET NCH 60V 31A DIEN-C... |
| EPC2XXA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| PVQ-EPC20 | Panduit Corp | 103.61 $ | 1000 | PANVIEW IQ EXPANSION PORT... |
| EPC2102ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2102 | EPC | 3.78 $ | 9500 | TRANS GAN SYMMETRICAL HAL... |
| EPC2040 | EPC | 0.48 $ | 1000 | MOSFET NCH 15V 3.4A DIEN-... |
| EPC2001C | EPC | -- | 165000 | TRANS GAN 100V 36A BUMPED... |
| EPC2012C | EPC | -- | 10000 | TRANS GAN 200V 5A BUMPED ... |
| EPC2007C | EPC | 0.71 $ | 35000 | TRANS GAN 100V 6A BUMPED ... |
| EPC2110 | EPC | 0.78 $ | 22500 | MOSFET 2NCH 120V 3.4A DIE... |
| EPC2049ENGRT | EPC | 2.4 $ | 1000 | TRANS GAN 40V BUMPED DIEN... |
| EPC2032ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 100V 48A BUMPED... |
| EPC2TI32N | Intel FPGAs/... | 90.29 $ | 2000 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2103ENGRT | EPC | 3.83 $ | 5000 | TRANS GAN SYM HALF BRDG 8... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
EPC2007C Datasheet/PDF