EPC2032ENGRT Allicdata Electronics

EPC2032ENGRT Discrete Semiconductor Products

Allicdata Part #:

917-EPC2032ENGRTR-ND

Manufacturer Part#:

EPC2032ENGRT

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN 100V 48A BUMPED DIE
More Detail: N-Channel 100V 48A (Ta) Surface Mount Die
DataSheet: EPC2032ENGRT datasheetEPC2032ENGRT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: eGaN®
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
Description

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The EPC2032ENGRT is a Enhancement mode 30V N-Channel 20A Power MOSFET. It is a type of field-effect transistor which is designed to handle large output currents and high voltage operation with high temperature operating capability. This makes it a suitable choice for use in most power applications – such as those found in consumer electronics, communications and automotive industries.

The EPC2032ENGRT features a low RDSon (drain-source on-resistance) of only 5.2 milliohms, lower gate charge, and low internal gate resistance. It is available in power dissipations up to over 25 watts, as well as a wide variety of other parameters and features.

In terms of its application field, the EPC2032ENGRT is suited for high efficiency power conversion applications such as DC/DC switching regulators and motor drivers. It is also ideal for driving high power LEDs in lighting applications, due to its higher temperature rating and higher current capabilities.

As for the working principle, the EPC2032ENGRT is a type of transistor, known as a field-effect transistor (FET). A FET uses an electric field, either positive or negative, to control the conductivity along the channel of its source and drain, as opposed to another type of transistor, the bipolar transistor, which is controlled by the flow of current.

When voltage is applied to the gate of the EPC2032ENGRT, it starts conducting current through the source and drain terminals. The gate voltage controls how much current can flow between the source and the drain, allowing the user to control the current level in the circuit. This is referred to as voltage-controlled current flow.

The EPC2032ENGRT also features ESD (electrostatic discharge) protection, which prevents damage to sensitive components, connections, and other associated equipment from high voltages. This makes it an ideal choice for use in environments where static electricity or other sources of high voltages may be present.

Overall, the EPC2032ENGRT is a highly reliable and efficient device designed for applications requiring large output currents and high voltage operation. Its convenient small size and low RDSon make it a cost-effective and versatile solution for power applications.

The specific data is subject to PDF, and the above content is for reference

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