Allicdata Part #: | 917-EPC2101ENG-ND |
Manufacturer Part#: |
EPC2101ENG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 2N-CH 60V BUMPED DIE |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 3... |
DataSheet: | EPC2101ENG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | eGaN® |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A, 38A |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 30V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The EPC2101ENG is an advanced advanced high-density power/gate array (PGA) containing 2,000 or 4,000 or 6,000 or 10,000 or 12,000 or 20,000 transistors optimized for class-D audio, USB and LCD panel applications. This array is the smallest and most cost effective high-density power/gate array available on the market today. It offers the widest range of features including high-performance and high-reliability.
The power/gate array allows small to large power supply designs, offering capabilities that are traditionally difficult to achieve in conventional chip sets. This array has an adjustable voltage drop compensation feature which improves the performance of the device during start-up and operation. It is designed to maximise power efficiency and switching performance with optimum temperature & current design. The chip is designed to withstand operating temperatures as high as 150°C and a robust package withstands board flex and shock.
The EPC2101ENG features a voltage rating of Vdss=1.8V and an operating range of Vgs=±15V to Vds=1.8V. It can switch peak currents up to 60A and gate charge up to 1.25nC. It is available in a choice of two versions; standard, and \'fast\' versions featuring reduced gate and output capacitances, to operate at higher frequencies.
The EPC2101ENG utilizes a leading edge array structure featuring stacked, horizontal transistors connected vertically. This structure maximizes area efficiency, allowing more MOSFETs to fit in the same area as other arrays. This structure also has good electrical performance, increased voltage controllability, higher power density and improved thermal performance. The array is connected to a common gate, allowing the transistors to have the same voltage level. This results in improved frequency response and higher transient response capability.
The EPC2101ENG is commonly used for applications such as audio switching, power supply control, selectable power supplies, solid-state relays, high-speed data switches, variable frequency drives, and class-D amplifiers. It is also used for logic level conversion, active load controllers, charging circuits, and low/ medium frequency applications such as motor control.
In a nutshell, the EPC2101ENG is an advanced, high-density power/gate array designed to offer superior performance in a wide range of applications. It features a stacked, horizontal transistor array structure that maximizes area efficiency, while delivering improved electrical performance, increased voltage controllability, higher power density and improved thermal performance. This array is rated at Vdss=1.8V and can switch peak currents of up to 60A. Ultimately, the EPC2101ENG is the ideal choice for audio switching, power supply control, selectable power supplies, solid-state relays, high-speed data switches, variable frequency drives, and class-D amplifiers, among other applications.
The specific data is subject to PDF, and the above content is for reference
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