EPC2104 Discrete Semiconductor Products |
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Allicdata Part #: | 917-1184-2-ND |
Manufacturer Part#: |
EPC2104 |
Price: | $ 3.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN SYMMETRICAL HALF BRIDG |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 100V 23A S... |
DataSheet: | EPC2104 Datasheet/PDF |
Quantity: | 9500 |
500 +: | $ 3.53737 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 23A |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 5.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 50V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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EPC2104 is a type of family of enhancement mode, N-channel, gallium arsenide (GaAs) based field effect transistors (FETs). This type of FET is typically used for high speed switching and line driver applications. This particular type of FET is relatively expensive due to its increased manufacturing complexities and its Gallium Arsenide based components.
The working principle behind EPC2104 is fairly complex and involves the physics of electronic circuits. To put it simply, FETs are like a valve that allows or shuts off current flow through a material. When the voltage is applied to the gate of a FET, it controls the flow of current between the source and the drain. In the case of the EPC2104, the gate terminal enables the flow of electrons to move from the source to the drain, allowing current to flow when a voltage is applied.
The structure of an EPC2104 consists of multiple transistors formed in an array of 40 or 48 elements for improved density. The device also has a high breakdown voltage, making it suitable for high frequency applications. The array also allows for the implementation of multiple connections for simplicity of complexity applications. Additionally, the device has high frequency performance, low input offset voltage and low noise.
When it comes to applications, the EPC2104 is ideally suited for high speed switching circuits and light driver applications. This is largely due to its high breakdown voltage, its low input offset voltage, and its low noise characteristics. As a result, this type of FET can be used in high speed signal transmission, high voltage power amplifiers, as well as optical switches and Modulators.
In conclusion, the EPC2104 is a unique type of N-channel enhancement mode FET with an array structure. This type of FET offers improved density over other FETs, and it’s suitable for line drivers and high speed switching applications. The device also has a high breakdown voltage, a low input offset voltage, and low noise, making it suitable for high frequency operation.
The specific data is subject to PDF, and the above content is for reference
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