EPC2020ENGR Discrete Semiconductor Products |
|
| Allicdata Part #: | 917-EPC2020ENGRTR-ND |
| Manufacturer Part#: |
EPC2020ENGR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | EPC |
| Short Description: | TRANS GAN 60V 60A BUMPED DIE |
| More Detail: | N-Channel 60V 60A (Ta) Surface Mount Die |
| DataSheet: | EPC2020ENGR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 16mA |
| Package / Case: | Die |
| Supplier Device Package: | Die |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 30V |
| Vgs (Max): | +6V, -4V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 31A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | GaNFET (Gallium Nitride) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EPC2020ENGR is a power MOSFET ideal for applications where hundreds of milliamps need to be controlled. It is designed for use in a variety of power and load switch applications. This device is available in two configurations, the N-channel EPC2020ENGR and the P-channel EPC2020ENGRL. The EPC2020ENGR is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a relatively low threshold voltage. It has the advantage of being low-cost and very compact, making it ideal for applications where space is an issue. The device is capable of providing excellent high-side and low-side switching, and can be used in a variety of switching applications.
The EPC2020ENGR works on the principle of MOSFETs. MOSFETs are transistors that use the electrical properties of metal-oxide-semiconductor layers to allow electrical current to be switched on and off. In the EPC2020ENGR, the MOSFETs have three parts which can be divided into gates. The first is the gate, an insulated layer of metal-oxide-semiconductor (MOS) which is insulated from the substrate by the gate oxide layer. The second is the drain, an area in the MOSFET which connects the source and drains to the substrate. The third is the source, an area of the MOSFET which connects the drain to the substrate.
When a voltage is applied to the gate of the EPC2020ENGR, the gate oxide layer becomes charge-polarized. This creates an electric field, which changes the conductivity of the MOS device. When the voltage is switched off, the charge-polarized gate oxide layer resets, turning off the current flow. The speed at which the EPC2020ENGR switches is dependent on the threshold voltage and the rise time.
The EPC2020ENGR can be used in a variety of applications, including high-current switching, such as automotive applications, and high-frequency switching, such as telecommunications. The device is available in a range of packages, including the dual-in-line (DIP) package, the quad flat package (QFP), and the ENGL package. The EPC2020ENGR is also available with junction temperatures ranging from -55°C to +115°C, temperature coefficients up to +30°C, and power dissipation up to 10W.
The EPC2020ENGR is a versatile device which is ideal for use in applications where space may be limited and high-current switching is required. It offers excellent performance, and is a cost-effective solution for your power and load switch applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| EPC2015C | EPC | -- | 17500 | TRANS GAN 40V 33A BUMPED ... |
| EPC2XXA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
| EPC2016C | EPC | -- | 492500 | TRANS GAN 100V 18A BUMPED... |
| EPC2106 | EPC | -- | 14000 | TRANS GAN SYM 100V BUMPED... |
| EPC2105 | EPC | 3.87 $ | 10000 | TRANS GAN ASYMMETRICAL HA... |
| EPC2034 | EPC | 4.0 $ | 2000 | TRANS GAN 200V 48A BUMPED... |
| EPC2103ENGRT | EPC | 3.83 $ | 5000 | TRANS GAN SYM HALF BRDG 8... |
| EPC2LI20 | Intel FPGAs/... | -- | 61 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2TI32N | Intel FPGAs/... | 90.29 $ | 2000 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2032ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 100V 48A BUMPED... |
| EPC2030 | EPC | 3.27 $ | 8500 | MOSFET NCH 40V 31A DIEN-C... |
| EPC2036 | EPC | -- | 535779 | TRANS GAN 100V 1A BUMPED ... |
| EPC2104ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 100V BUMP... |
| EPC2102ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
| EPC2007 | EPC | 0.0 $ | 1000 | TRANS GAN 100V 6A BUMPED ... |
| EPC2010C | EPC | 2.98 $ | 15500 | TRANS GAN 200V 22A BUMPED... |
| EPC2023 | EPC | 3.58 $ | 8500 | TRANS GAN 30V 60A BUMPED ... |
| EPC2112ENGRT | EPC | 2.7 $ | 1000 | 200 V GAN IC FET DRIVERHi... |
| EPC2036ENGRT | EPC | 0.0 $ | 1000 | MOSFET N-CH 100V 1.7A DIE... |
| EPC2LI20N | Intel FPGAs/... | 73.88 $ | 1000 | IC CONFIG DEVICE 1.6MBIT ... |
| EPC2108ENGRT | EPC | 0.64 $ | 2500 | TRANS GAN 3N-CH BUMPED DI... |
| EPC2105ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
| EPC2031 | EPC | 3.12 $ | 5500 | MOSFET NCH 60V 31A DIEN-C... |
| EPC2014 | EPC | 0.69 $ | 9000 | TRANS GAN 40V 10A BUMPED ... |
| EPC2040ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 15V BUMPED DIEN... |
| EPC2050ENGRT | EPC | 2.62 $ | 1000 | TRANS GAN 350V BUMPED DIE... |
| EPC2012 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 3A BUMPED ... |
| EPC2001C | EPC | -- | 165000 | TRANS GAN 100V 36A BUMPED... |
| EPC2047ENGRT | EPC | 4.24 $ | 1000 | TRANS GAN 200V BUMPED DIE... |
| EPC2046ENGRT | EPC | 3.16 $ | 3000 | TRANS GAN 200V BUMPED DIE... |
| EPC2108 | EPC | 0.64 $ | 17500 | MOSFET 3 N-CH 60V/100V 9B... |
| EPC2019 | EPC | -- | 11000 | TRANS GAN 200V 8.5A BUMPE... |
| EPC2106ENGRT | EPC | 0.6 $ | 17500 | TRANS GAN 2N-CH 100V BUMP... |
| EPC2110ENGRT | EPC | 0.78 $ | 12500 | TRANS GAN 2N-CH 120V BUMP... |
| EPC2103ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
| EPC2037ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V BUMPED DIE... |
| EPC2025 | EPC | 0.0 $ | 1000 | TRANS GAN 300V 150MO BUMP... |
| EPC2034ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 200V 31A BUMPED... |
| EPC2115ENGRT | EPC | 2.74 $ | 1000 | 150 V GAN IC DUAL FET DRI... |
| EPC2051ENGRT | EPC | 0.41 $ | 2500 | TRANS GAN 100V DIE CU PIL... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
EPC2020ENGR Datasheet/PDF