EPC2020ENGR Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2020ENGRTR-ND |
Manufacturer Part#: |
EPC2020ENGR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 60V 60A BUMPED DIE |
More Detail: | N-Channel 60V 60A (Ta) Surface Mount Die |
DataSheet: | EPC2020ENGR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 31A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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The EPC2020ENGR is a power MOSFET ideal for applications where hundreds of milliamps need to be controlled. It is designed for use in a variety of power and load switch applications. This device is available in two configurations, the N-channel EPC2020ENGR and the P-channel EPC2020ENGRL. The EPC2020ENGR is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a relatively low threshold voltage. It has the advantage of being low-cost and very compact, making it ideal for applications where space is an issue. The device is capable of providing excellent high-side and low-side switching, and can be used in a variety of switching applications.
The EPC2020ENGR works on the principle of MOSFETs. MOSFETs are transistors that use the electrical properties of metal-oxide-semiconductor layers to allow electrical current to be switched on and off. In the EPC2020ENGR, the MOSFETs have three parts which can be divided into gates. The first is the gate, an insulated layer of metal-oxide-semiconductor (MOS) which is insulated from the substrate by the gate oxide layer. The second is the drain, an area in the MOSFET which connects the source and drains to the substrate. The third is the source, an area of the MOSFET which connects the drain to the substrate.
When a voltage is applied to the gate of the EPC2020ENGR, the gate oxide layer becomes charge-polarized. This creates an electric field, which changes the conductivity of the MOS device. When the voltage is switched off, the charge-polarized gate oxide layer resets, turning off the current flow. The speed at which the EPC2020ENGR switches is dependent on the threshold voltage and the rise time.
The EPC2020ENGR can be used in a variety of applications, including high-current switching, such as automotive applications, and high-frequency switching, such as telecommunications. The device is available in a range of packages, including the dual-in-line (DIP) package, the quad flat package (QFP), and the ENGL package. The EPC2020ENGR is also available with junction temperatures ranging from -55°C to +115°C, temperature coefficients up to +30°C, and power dissipation up to 10W.
The EPC2020ENGR is a versatile device which is ideal for use in applications where space may be limited and high-current switching is required. It offers excellent performance, and is a cost-effective solution for your power and load switch applications.
The specific data is subject to PDF, and the above content is for reference
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