EPC2021 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 14mA
Package / Case:	Die
Supplier Device Package:	Die
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1650pF @ 40V
Vgs (Max):	+6V, -4V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 5V
Series:	eGaN®
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 29A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	90A (Ta)
Drain to Source Voltage (Vdss):	80V
Technology:	GaNFET (Gallium Nitride)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Field effect transistors (FETs) are a type of transistor that utilizes an electric field to control the output current within a circuit. FETs are commonly used for switching and amplifying signals in a variety of applications. Among the most commonly used FETs is the MOSFET. MOSFETs can be used in a variety of circuits, including single-amplifier, dual-amplifier, and multiple-amplifier circuits. This article will discuss the application field and working principle of EPC2021 FETs and MOSFETs - Single.Field Effect Transistors (FETs) are semiconductor devices that use a gate and drain in conjunction with an electric field to control the flow of current between the source and drain. FETs are sometimes referred to as "field-effect vacuum tubes" and are used in systems where power levels of 1 W or greater are required. FETs are capable of providing high levels of functionality and efficiency, and are commonly used in digital logic, and analog and power electronic circuits.MOSFETs are a type of FET that uses either a metal-oxide-semiconductor (MOS) gate or a metal-oxide-insulator-semiconductor (MIS) gate to control current flow. MOSFETs are predominantly used in integrated circuits, as they offer excellent levels of integration and performance for a variety of applications.The EPC2021 FETs and MOSFETs - Single is the latest version of the FET and MOSFET technology. This technology combines improvements in the current-voltage performance characteristics, smaller package size, higher power density, lower power loss, and improved EMI shielding. This technology also offers improved switching speeds, lower capacitance, and higher breakdown voltages.The working principle of EPC2021 FETs and MOSFETs - Single is based on the principle of controlling current flow by applying a voltage to the gate terminal. In order to control current flow, the drain must be connected to the source terminal. When a voltage is applied to the gate terminal, it causes a depletion zone to form near the gate. This zone will expand or contract depending on the magnitude and polarity of the gate voltage. As the zone contracts, the current flow between the drain and source will increase, and vice versa.The application field of EPC2021 FETs and MOSFETs - Single includes switching and amplifying signals, as well as power control and regulation. These transistors can be used in power electronic circuits, digital logic circuits, RF circuits, and other types of high-power applications.In conclusion, EPC2021 FETs and MOSFETs - Single offers excellent performance, small package size, and improved functionality for a variety of applications. This technology is ideal for power electronics, digital logic applications, switching amplifiers, and other applications where high or low current needs to be controlled. By understanding the working principle and application field of these transistors, engineers can better design and implement these devices for their specific applications.

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