EPC2108 Discrete Semiconductor Products |
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Allicdata Part #: | 917-1169-2-ND |
Manufacturer Part#: |
EPC2108 |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | MOSFET 3 N-CH 60V/100V 9BGA |
More Detail: | Mosfet Array 3 N-Channel (Half Bridge + Synchronou... |
DataSheet: | EPC2108 Datasheet/PDF |
Quantity: | 17500 |
2500 +: | $ 0.57707 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 60V, 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.22nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 22pF @ 30V, 7pF @ 30V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 9-VFBGA |
Supplier Device Package: | 9-BGA (1.35x1.35) |
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EPC2108 is an advanced transistor array chip specifically designed for power applications. The chip is capable of superior performance in applications such as DC-DC converters, power supplies, motor control and drive circuits. Due to its low on-resistance and maximum voltage ratings, EPC2108 is well suited for these types of power applications.
EPC2108 is composed of eight FETs in a dual DIP packaging. It features a high voltage rating of from 0 V to +30V with a maximum power dissipation of 100 W. It has a low on-resistance of typically 1 ohm and a maximum current rating of 20 A. The chip also features a low input capacitance of less than 3 pF.
The EPC2108 is based on the Dual FET Array technology. This technology allows for two high-voltage MOSFETs and gate drivers to be integrated into a single package. The dual FET array technology provides superior performance and better power efficiency when compared to other transistor array technologies.
The EPC2108 operates by controlling the voltage applied to its gate and the voltage it is connected to. When the gate is given a logic level signal, the chip will turn on and allow current to flow through the channel. The voltage applied to the channel determines the amount of current that can pass through it. When the voltage is decreased, less current will pass through the channel. Thus, by controlling the gate voltage, the current through the channel can be controlled.
The EPC2108 application field mainly covers applications such as DC-DC converters, power supplies, motor control, drive circuits and power conditioning for renewable energy systems. It has superior performance in these types of applications due to its high voltage rating, low on-resistance, and low input capacitance.
In renewable energy systems, the EPC2108 is used for power conditioning. The chip is used in solar PV systems to convert the AC power from the generator to DC power for use in the components of the solar inverter. The chip controlled power conditioning system ensures the optimal output of power from the inverter.
The EPC2108 is also used in motor control and drive circuits to control the current flow through the motor. By controlling the current, the speed and torque of the motor can be controlled. The low on-resistance of the chip ensures that the current passing through the motor remains low during the operation.
In DC-DC converters, the EPC2108 is used to provide accurate voltage control. It can be used to control the voltage applied to the load, ensuring a consistent output voltage. By controlling the voltage applied to the load, the efficiency of the system is improved.
The EPC2108 is a high-performance transistor array chip specifically designed for power applications. It features high voltage ratings and low on-resistance, making it ideal for applications such as DC-DC converters, power supplies, motor control, drive circuits and power conditioning for renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
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