FCH041N60F

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	595W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	14365pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	360nC @ 10V
Series:	SuperFET® II
Rds On (Max) @ Id, Vgs:	41 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	76A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The FCH041N60F is a silicon carbide (SiC) MOSFET. It is the smallest in class of 600V and 41A devices of its kind and can be used for a variety of applications. This application note provides a basic explanation of the working principle and application field of the FCH041N60F.

Working Principle

The FCH041N60F is a N-channel enhancement mode MOSFET. The internal structure of the device consists of three distinct layers: an n-type substrate, p+-type layers and an n+-gate. This structure enables the device to switch with very low on-resistance, fast switching speeds and low on-state losses.When there is no bias applied to the gate of the FCH041N60F, it is in its off-state, which has virtually no current between the drain and source. When a positive voltage (VGS) is applied to the gate, the p+-type layers surrounding the n+-gate become depleted, thus allowing current from source to drain. The drain current in this configuration is determined by VGS and the MOSFET’s characteristics, such as drain-source breakdown voltage (BVDSS), drain-source on-resistance (RDS(ON)), etc. As the applied VGS increases, the drain current increases accordingly until it reaches the device’s maximum current rating, I D (max).When a negative voltage (VGS) is applied to the gate, it will create a depletion region at the p+-type layers. This will pinch off the current between source and drain, and thus turning off the device.

Application Field

Due to its low drain-to-source on-resistance (RDS(ON)), fast switching speed,and high temperature ratings, the FCH041N60F is suitable for use in a wide range of applications, including motor control, intelligent control, power inverters, power converters and power management applications. The FCH041N60F is particularly well suited for high current, high frequency, or high temperature applications. It can operate at up to 600V and can handle up to 41A of drain current at 25°C, making it ideal for use in electric motor drives, switched-mode power supplies (SMPS) and uninterruptible power supply (UPS) systems. Due to its fast switching speeds and low gate-source capacitance, it is also suitable for use in high frequency switched-mode power supply (SMPS).

Conclusion

In conclusion, the FCH041N60F is a silicon carbide (SiC) MOSFET suitable for a wide range of power applications, including motor control, intelligent control, power converters and power management. Its low RDS(ON), fast switching and temperature ratings make it an ideal device for high current, high frequency and high temperature applications.

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