FCH099N65S3-F155

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FCH099N65S3-F155 is an N-channel enhancement-mode vertical double diffused metal-oxide-semiconductor field-effect transistor (MOSFET) specifically made for high-efficiency, high-current switching applications. This device offers superior switching performance as compared to general-purpose FETs, and is particularly suited for pulse and power control applications involving high gate-to-drain capacitance in high current pulses. This device is manufactured using a vertical double diffused metal-oxide-semiconductor (MOS) process, and offers superior switching performance due to its low on-resistance.

The FCH099N65S3-F155 has a wide range of applications in several different fields, including power control, pulse applications, and high-power switching. It can be used in a variety of applications, from motor control systems to consumer electronics. In motor control applications, the FCH099N65S3-F155 is used to switch motor current in order to allow variable speed control. Similarly, the FCH099N65S3-F155 can be used in consumer electronics such as DVD players and TVs, to control the pulse and current flow in order to optimize the efficiency of the device. In addition, the FCH099N65S3-F155 can be used in high-current, high-power switching applications, such as industrial and automotive applications.

The FCH099N65S3-F155 is a vertical double diffused MOSFET with a drain-source breakdown voltage of 650V, maximum drain-source on-state resistance of 0.0099Ω, and a maximum gate-source voltage of ±20V. This device also has a maximum isothermal power dissipation of 155W. Its maximum drain current is 75A, and the maximum power dissipation is 385W. In addition, the FCH099N65S3-F155 has a total gate charge of 18nC and a total gate to drain charge transfer of 4.4nC.

The working principle of the FCH099N65S3-F155 is based on the principles of field-effect transistor technology. This device operates by using a voltage applied to its Gate terminal to control the flow of electrons through the device between the Source and Drain terminals. The drain current can be controlled by varying the voltage on the Gate terminal, allowing a high-efficiency and controlled current flow. The device is also capable of switching large currents in high-power applications due to its low on-resistance.

In summary, the FCH099N65S3-F155 is an N-channel enhancement-mode MOSFET that is well-suited for high-efficiency, high-current switching applications. This device offers unmatched switching performance in pulse and power control applications due to its low on-resistance and high gate-to-drain capacitance. The device has a wide range of applications in motor control, consumer electronics, and high-power switching, making it well-suited for a variety of uses. The device operates on the principles of field-effect transistor technology and is capable of switching large currents at high efficiency.

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