Allicdata Part #: | FCH041N65F-F155-ND |
Manufacturer Part#: |
FCH041N65F-F155 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 76A TO247 |
More Detail: | N-Channel 650V 76A (Tc) 595W (Tc) Through Hole TO-... |
DataSheet: | FCH041N65F-F155 Datasheet/PDF |
Quantity: | 1000 |
Series: | FRFET®, SuperFET® II |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 7.6mA |
Gate Charge (Qg) (Max) @ Vgs: | 294nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13020pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 595W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 Long Leads |
Package / Case: | TO-247-3 |
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FCH041N65F-F155 transistors are semiconductor devices which have revolutionized the technology of electronics, radio, and computers. It plays a significant role in modern day communication and electrical management. Comprising of three terminals- the source, the drain and the gate; the FCH041N65F-F155 MOSFET makes use a channel of controlled resistance to control the flow of current. This type of transistor belongs to the FET family, with its superior features making it ideal to be used in most of today’s electronics applications. The FCH041N65F-F155 stands for an FET type with a unique ID which is used as an identifier in the semiconductor industry. This FET is a type of Insulated-Gate Field-Effect Transistor (IGFET) and is basically a voltage control switch. It is made of two layers of different types of doped silicon separated and insulated from each other by a thin layer of silicon dioxide. It is primarily used for its awesome switching capabilities, and performs high speed switch functions.
Applications of FCH041N65F-F155 include those of power switching and amplification. Even though it is intended to be used as a power device, the FET transistor can be configured to work as a voltage amplifier. Furthermore, it also finds application in performing voltage regulation functions and as an active power bleed.
The working principle of an FCH041N65F-F155 is quite simple yet precise. It works just like a conventional switch. When the voltage is applied to the gate terminal, a conductive channel is created between the source and the drain. This channel, depending on the transistor density, can be either narrow or wide. Subsequently, it changes the gate-drain voltage and current passes through the transistor. Hence, the current between the source and the drain is regulated by changing the gate voltage.
The FCH041N65F-F155 provides excellent performance due to its small size, high speed switching capabilities and high current carrying capacity. It is actually one of the most reliable and efficient transistors available due to the ability to control the current for high-frequency applications at a low voltage range.
It is also very resistant to temperature variations due to its small size and its low sensitivity to ambient temperature changes. This makes it an ideal choice for device manufacturing as its temperature range is -55°C to 175°C and can be used in both military and commercial applications. Besides, the FCH041N65F-F155 also has very low power consumption and can be used in portable electronics.
The FCH041N65F-F155 is suitable for applications such as radios, mobile handsets, telecom transmitters, base station amplifiers, switching applications, power switching, automatic protection systems, GPS systems, TV tuners, IT telecommunications, and other industrial applications.
In conclusion, the FCH041N65F-F155 is basically a type of FET with a unique ID which is used as an ID in the semiconductor industry. It is extremely useful for applications in power switching and has superior features like low power consumption, zero gate-drain feedback, high speed switching etc. Moreover, it also resistant to temperature changes and has excellent performance even in high temperature ranges. Thus, due to all these features, this FET transistor is preferred in various commercial and military applications.
The specific data is subject to PDF, and the above content is for reference
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