Allicdata Part #: | FCH067N65S3-F155-ND |
Manufacturer Part#: |
FCH067N65S3-F155 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 44A TO247 |
More Detail: | N-Channel 650V 44A (Tc) 312W (Tc) Through Hole TO-... |
DataSheet: | FCH067N65S3-F155 Datasheet/PDF |
Quantity: | 181 |
Series: | SuperFET® III |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 67 mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4.4mA |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3090pF @ 400V |
FET Feature: | Super Junction |
Power Dissipation (Max): | 312W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 Long Leads |
Package / Case: | TO-247-3 |
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The FCH067N65S3-F155 is an N-Channel, field-effect transistor (FET) that operates over a wide range of voltages. It is a common source-gate voltage FET, delivering sharp switching, fast switching speed, low input capacitance and excellent frequency response. FCH067N65S3-F155 FETs are most commonly used in low-power low-voltage circuits, such as audio and signal processing, RF and radio frequency interference (RFI) suppression, and low-voltage/low-current amplifier applications. Generally, when using an FCH067N65S3-F155, its gate voltage can be as low as -2.5V and its drain voltage can range from 0V to 65V.
The operating principles behind the FCH067N65S3-F155 are similar to those of other field-effect transistors (FETs), in that its main function is to control the flow of current through an electric field created by the transistor\'s gate voltage. This electric field is known as the threshold voltage, or the voltage required for a current to flow through the transistor. The FCH067N65S3-F155\'s threshold voltage can be as low as -2.5V, which allows for the current control required for low voltage and low power applications.
By adjusting the transistor\'s gate voltage, the electric field created between the source and drain terminals can be effectively altered. This alters the resistance that the FCH067N65S3-F155 offers between its drain and source terminals, thereby allowing the current flow through the circuit to be precisely regulated. This is especially useful in amplifying weak signals, such as those found in audio or signal processing applications. By diverting some of the amplified current to ground, the signal can be further filtered and amplified.
In addition, the FCH067N65S3-F155 can also be used in application that require high-speed switching. As the FET\'s gate voltage is raised, the electric field\'s threshold voltage is also intensified, which causes the transistor to switch off faster. This makes the FCH067N65S3-F155 well-suited for applications that require quick reaction times, such as RF and RFI elimination and noise elimination. The FET also offers low input capacitance, meaning that even weak signals can be detected quickly and accurately.
The FCH067N65S3-F155 is most commonly used in low-power, low-voltage circuits. It is a common source-gate voltage FET that delivers sharp switching, fast switching speed, low input capacitance and excellent frequency response. By adjusting its gate voltage, the resistance between its drain and source terminals can effectively be changed, thereby allowing the current to be precisely regulated. This FET can be used in a variety of applications, such as amplifying weak signals, RF and RFI elimination, and noise elimination. In addition, the FET also has low input capacitance, allowing it to react quickly and accurately to input signals.
The specific data is subject to PDF, and the above content is for reference
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