FCH099N60E Allicdata Electronics
Allicdata Part #:

FCH099N60E-ND

Manufacturer Part#:

FCH099N60E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V TO247
More Detail: N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-...
DataSheet: FCH099N60E datasheetFCH099N60E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 357W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3465pF @ 380V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 99 mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FCH099N60E is a fast switching three-terminal silicon device. This device belongs to the family of high-voltage transistors, commonly known as Field Effect Transistors - FETs, and more specifically the MOSFETs - single category. This type of product has various applications and working principles which will be discussed throughout this article.

The FCH099N60E is a technologically advanced N-channel enhancement mode MOSFET. It is specifically designed for use in high-speed switching applications up to 2A/60V/600V and is also capable of providing temperatures up to +150℃. The product is molded in an industry standard TO-220, TO-247 and SOT-89 plastic packages. Some of its other features include low gate charge, integrated clamp diode, low avalanche energy, low turn-on voltage, good thermal stability and very low input capacitance.

One of the primary applications of this transistor is switching amplifiers. With its fast switching capability, it can provide a high cut-off frequency to amplify low-level signals while maintaining excellent signal integrity. Additionally, the low input capacitance of the transistor ensures a very low noise level in the output. This feature makes it suitable for use in noise-sensitive applications such as audio/video switching.

Apart from switching amplifiers, the FCH099N60E can also be used in DC/DC converters and motor drive applications. Due to its low turn-on voltage and low gate charge, it can provide better efficiency and higher current densities in these applications. It is also an ideal choice for various consumer electronics such as mobile phones, laptops and other battery operated portable devices.

The working principle behind the FCH099N60E is fairly simple. This type of transistor is an N-channel enhancement mode MOSFET, which means that it consists of an N-type semiconductor material and a metal oxide film. This arrangement allows for an electric field to be generated when a voltage is applied to the gate terminal. This electric field is then used to modulate the conductivity of the N-type material, thus allowing current to flow. The amount of current that can flow through the transistor is determined by the gate voltage and the amount of charge stored in the oxide film.

To conclude, the FCH099N60E is a versatile transistor that can be used in a variety of applications. Its fast switching capability, low noise level and low input capacitance make it suitable for use in audio/video switching, DC/DC converters and other consumer electronics. Additionally, its working principle is easy to understand, making it a great choice for those looking to develop their electronic projects.

The specific data is subject to PDF, and the above content is for reference

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