Allicdata Part #: | FCH070N60E-ND |
Manufacturer Part#: |
FCH070N60E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 52A |
More Detail: | N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-... |
DataSheet: | FCH070N60E Datasheet/PDF |
Quantity: | 130 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 Long Leads |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 481W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4925pF @ 380V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 166nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCH070N60E is a high voltage MOSFET (metal oxide semiconductor field effect transistor) produced by Fairchild Semiconductor. It has a relatively low on-resistance of 0.07 ohms, which is relatively low compared to other comparable MOSFETs on the market. This low on-resistance makes the FCH070N60E ideal for use in applications such as inductive load switching, DC-DC converters, and other power switching applications. In addition, the FCH070N60E is also well-suited for high speed switching applications.
The FCH070N60E is a voltage-controlled FET that operates by sensing the voltage applied to the gate terminal. It is a three-terminal device consisting of a source, drain, and gate terminals. When a voltage is applied to the gate, it creates an electrical field which affects the behaviour of the charges passing from the source to drain, allowing the FET to act as a switch.
When the FCH070N60E is used as a switch, it operates in two main modes: enhancement mode and depletion mode. When in enhancement mode, a low voltage is applied to the gate, resulting in a weak electric field which allows current to flow from the source to the drain. In depletion mode, a high voltage is applied to the gate, resulting in a stronger electric field which damages the current flowing from source to drain.
The FCH070N60E is a “logic-level” MOSFET, meaning that it can be switched on at lower voltages than other typical MOSFETs. This feature makes the FCH070N60E ideal for use in applications where very low voltages are present, such as those encountered in today’s consumer electronics and computing devices. The FCH070N60E is also capable of handling higher load currents if necessary, making it a very versatile device.
The FCH070N60E is also designed for use as an efficient, low-noise amplifier, thanks to its low capacitance, low input loading, and high slew rate. It is well-suited for use in low-noise amplifier circuits such as those used in audio, video, and telecommunications systems. Additionally, the FCH070N60E has a wide voltage range, making it well-suited for use in battery powered systems.
Overall, the FCH070N60E MOSFET is a high-performance, versatile device that is well-suited for a wide variety of applications, including inductive load switching, DC-DC converters, high speed switching, and low noise amplifiers. Its excellent switching characteristics and relatively low on-resistance make it an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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