FCH077N65F-F085 Allicdata Electronics
Allicdata Part #:

FCH077N65F-F085-ND

Manufacturer Part#:

FCH077N65F-F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 650V 54A TO247
More Detail: N-Channel 650V 54A (Tc) 481W (Tc) Through Hole TO-...
DataSheet: FCH077N65F-F085 datasheetFCH077N65F-F085 Datasheet/PDF
Quantity: 254
Stock 254Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 481W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7162pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
Series: Automotive, AEC-Q101, SuperFET® II
Rds On (Max) @ Id, Vgs: 77 mOhm @ 27A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCH077N65F-F085 is a high-power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), often used in applications such as power management, motor control, and high-current switching. This device features a maximum drain current of 77A, maximum drain source voltage of 650V, and a maximum operating temperature of 175°C. The device is a high-voltage, low-on-resistance, single N-channel MOSFET, which is suitable for high-efficiency switch mode power supplies and DC-DC converters.

The FCH077N65F-F085 functional principle is straightforward and well understood. The device consists of a gate, drain, and source, which form the basis of the MOSFET structure. The gate is the controlling element and the voltage applied to the gate determines the drain-source resistance. When the gate voltage is low, the transistor is off, preventing current from flowing. When the gate voltage is high, the transistor is on, allowing current to flow.

In terms of usage, the FCH077N65F-F085 works best in applications where high currents must be switched in a short time. These include motor control systems, uninterrupted power supplies, and home appliance control. The device is particularly useful in applications where high efficiency and low losses are required, such as pulse width modulated converters. Additionally, the FCH077N65F-F085 works with DC (direct current) and AC (alternating current) sources.

Today, the FCH077N65F-F085 is commonly used in high-voltage, high-current applications. It is a reliable and efficient device, offering a good level of noise immunity and thermal stability. The device is also well suited to applications with significant power dissipation. This makes it ideal for applications such as power management. The FCH077N65F-F085 is also suitable for large DC motor control applications, offering precise control of motor speed.

In summary, the FCH077N65F-F085 is a high-voltage, low-on-resistance, single N-channel MOSFET, offering a maximum drain current of 77A, maximum drain source voltage of 650V, and a maximum operating temperature of 175°C. The device is suited to applications requiring precise control of high currents, offering excellent performance at high frequencies. The device is also well suited to applications with large power dissipation, making it ideal for power management and motor control.

The specific data is subject to PDF, and the above content is for reference

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