Allicdata Part #: | FCH072N60-ND |
Manufacturer Part#: |
FCH072N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 52A TO247 |
More Detail: | N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-... |
DataSheet: | FCH072N60 Datasheet/PDF |
Quantity: | 434 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 481W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5890pF @ 380V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Series: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCH072N60 is a part of the FET MOSFET family, also known as field-effect transistors. These devices are used in circuits where switching from one state to another is required, as well as they are used to modulate signals. This device is a single channel device, which means it only has one channel of operation.
The FCH072N60 is a metal oxide semiconductor field-effect transistor (MOSFET). A MOSFET is an electronic device that provides an efficient way to control current in an electronic circuit. It works by allowing current to flow through a metal oxide layer to the gate, which can either be open or closed. This determines the level of current passing through the device.
The FCH072N60 is designed for high frequency switching applications. It has low internal gate capacitance and low gate-drain capacitance, allowing for fast switching speeds. Additionally, it has low on-state resistance and fast switching response time, making it ideal for applications requiring high-frequency frequency switching.
The FCH072N60 is also designed for high frequency power amplifier applications. It has a breakdown voltage of 600V, a thermal resistance of 175°C, and a gate threshold voltage of 4.0V. These features make it highly suitable for applications that require high power and high current such as radio communications, LCD displays, and other high power and high frequency applications.
In terms of working principles, the FCH072N60 utilizes a N-channel enhancement mode MOSFET. It is a depletion-type transistor that is controlled by the gate voltage. When the gate voltage is high, the device is turned off, and when the gate voltage is low, the device is turned on. This device does not require a bias voltage and can be operated with a single power supply.
In conclusion, the FCH072N60 is a high frequency switching MOSFET designed for high frequency power amplifiers and switching applications. Its low gate and drain capacitance, low on-state resistance, and fast switching response time make it ideal for these applications, while its depletion-type operation allows for single power supply operation. Its wide range of applications make it a good choice for any engineer working with high frequency circuit design.
The specific data is subject to PDF, and the above content is for reference
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