FCH072N60 Allicdata Electronics
Allicdata Part #:

FCH072N60-ND

Manufacturer Part#:

FCH072N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 52A TO247
More Detail: N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-...
DataSheet: FCH072N60 datasheetFCH072N60 Datasheet/PDF
Quantity: 434
Stock 434Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 481W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 380V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCH072N60 is a part of the FET MOSFET family, also known as field-effect transistors. These devices are used in circuits where switching from one state to another is required, as well as they are used to modulate signals. This device is a single channel device, which means it only has one channel of operation.

The FCH072N60 is a metal oxide semiconductor field-effect transistor (MOSFET). A MOSFET is an electronic device that provides an efficient way to control current in an electronic circuit. It works by allowing current to flow through a metal oxide layer to the gate, which can either be open or closed. This determines the level of current passing through the device.

The FCH072N60 is designed for high frequency switching applications. It has low internal gate capacitance and low gate-drain capacitance, allowing for fast switching speeds. Additionally, it has low on-state resistance and fast switching response time, making it ideal for applications requiring high-frequency frequency switching.

The FCH072N60 is also designed for high frequency power amplifier applications. It has a breakdown voltage of 600V, a thermal resistance of 175°C, and a gate threshold voltage of 4.0V. These features make it highly suitable for applications that require high power and high current such as radio communications, LCD displays, and other high power and high frequency applications.

In terms of working principles, the FCH072N60 utilizes a N-channel enhancement mode MOSFET. It is a depletion-type transistor that is controlled by the gate voltage. When the gate voltage is high, the device is turned off, and when the gate voltage is low, the device is turned on. This device does not require a bias voltage and can be operated with a single power supply.

In conclusion, the FCH072N60 is a high frequency switching MOSFET designed for high frequency power amplifiers and switching applications. Its low gate and drain capacitance, low on-state resistance, and fast switching response time make it ideal for these applications, while its depletion-type operation allows for single power supply operation. Its wide range of applications make it a good choice for any engineer working with high frequency circuit design.

The specific data is subject to PDF, and the above content is for reference

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