FCH077N65F-F155

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FCH077N65F-F155 is a high-voltage planar insulated gate bipolar transistor (IGBT) from Infineon Technologies. This high-voltage device, which is capable of working at up to +700 V, is ideally suited for a range of flat panel display and solar energy applications.

FCH077N65F-F155 is a type of FET – Field Effect Transistor. It is a type of transistor that relies on an electric field to control the shape and behaviour of the electrical current flowing through it. It consists of three terminals - a source, a gate and a drain - between which an electric field can be created by applying a voltage to the gate terminal. This electric field affects the conductance of the source-drain connection and this is how the transistor works. That is, it acts as an electronically controllable switch.

FCH077N65F-F155 is a single FET device and it has a low gate threshold voltage. This makes it an excellent choice for high voltage applications. It has a high current handling capacity, which is important in solar energy applications such as inverters, and it has a high frequency response. This makes it an ideal choice for flat panel display applications, as it can quickly switch between low and high voltage levels as needed.

The FCH077N65F-F155 is designed to provide a highly efficient, long-term and reliable operation. It is designed with a low voltage drop over the entire temperature range, and it has a low saturation voltage that provides optimum power efficiency. As well, it has a very low gate charge, which helps to reduce switching losses, thus increasing its efficiency.

In terms of its working principle, the FCH077N65F-F155 is designed to be triggered by applying a voltage to the gate terminal. This causes an electric field to be created between the source and the drain terminals, which then affects the conductivity of the connection. Depending on the voltage applied to the gate terminal, the transistor can either block or allow a flow of current between the source and drain.

Overall, the FCH077N65F-F155 from Infineon Technologies is a high-voltage IGBT device that is ideally suited for flat panel display and solar energy applications. It is a single FET device that has a low gate threshold voltage and a high current handling capacity. It is designed with a low voltage drop over the entire temperature range, and it has a low saturation voltage. When triggered by applying voltage to the gate, the FCH077N65F-F155 can either block or allow a flow of current between the source and drain, thus making it an excellent choice for high voltage applications.

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