FDB3502 Allicdata Electronics

FDB3502 Discrete Semiconductor Products

Allicdata Part #:

FDB3502TR-ND

Manufacturer Part#:

FDB3502

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 75V 6A TO-263AB
More Detail: N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc...
DataSheet: FDB3502 datasheetFDB3502 Datasheet/PDF
Quantity: 800
1 +: $ 0.48000
10 +: $ 0.46560
100 +: $ 0.45600
1000 +: $ 0.44640
10000 +: $ 0.43200
Stock 800Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 47 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB3502 is a single-channel enhancement-mode field effect transistor (FET) specifically designed for switching applications. It is manufactured by Fairchild Semiconductor, a leader in the semiconductor industry. The FDB3502 is highly durable and has a wide temperature range of -55 to 150°C, making it useful for a variety of applications.

The most common application for the FDB3502 is signal switching, as it can help make signals more efficient by turning them off when they are no longer needed. This is especially true with the signal switching in computers and other digital devices. It is also commonly used in signal amplification and signal conditioning, in order to improve the accuracy and reliability of the signal.

The FDB3502 is an FET, specifically, a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor is composed of three regions of semiconductor, which interact with electric fields in order to selectively control the current flow between the source and drain within the channel, allowing the user to switch a signal on and off with the use of electric fields. This type of transistor is particularly useful for switching on and off quickly, as it does not have to wait for the current to warm up, as bjts do.

The FDB3502 is an N-channel MOSFET and is highly durable, as it has a specific small-signal resistance of 1.5 mohms, which is much lower than that of other similar devices. The FDB3502 also has a wide voltage range of 8 to 40 V and a drain-source resistance of 35 mohms. This gives it a strong electric field effect, making it extremely useful for switching low-level signals. It is also capable of withstanding high temperatures, power losses, and excess electric fields, making it highly durable.

The FDB3502 is useful for a variety of applications, particularly those involving signal switching. It is highly durable and can withstand high temperatures, making it ideal for many different types of applications. It has a low electrical resistance and can switch low-level signals efficiently and accurately. By employing the FDB3502, users can ensure that their signals are properly and efficiently switched and amplified, making it an invaluable asset.

The specific data is subject to PDF, and the above content is for reference

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