FDB3502 Discrete Semiconductor Products |
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| Allicdata Part #: | FDB3502TR-ND |
| Manufacturer Part#: |
FDB3502 |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 75V 6A TO-263AB |
| More Detail: | N-Channel 75V 6A (Ta), 14A (Tc) 3.1W (Ta), 41W (Tc... |
| DataSheet: | FDB3502 Datasheet/PDF |
| Quantity: | 800 |
| 1 +: | $ 0.48000 |
| 10 +: | $ 0.46560 |
| 100 +: | $ 0.45600 |
| 1000 +: | $ 0.44640 |
| 10000 +: | $ 0.43200 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 41W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 815pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 47 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta), 14A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDB3502 is a single-channel enhancement-mode field effect transistor (FET) specifically designed for switching applications. It is manufactured by Fairchild Semiconductor, a leader in the semiconductor industry. The FDB3502 is highly durable and has a wide temperature range of -55 to 150°C, making it useful for a variety of applications.
The most common application for the FDB3502 is signal switching, as it can help make signals more efficient by turning them off when they are no longer needed. This is especially true with the signal switching in computers and other digital devices. It is also commonly used in signal amplification and signal conditioning, in order to improve the accuracy and reliability of the signal.
The FDB3502 is an FET, specifically, a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor is composed of three regions of semiconductor, which interact with electric fields in order to selectively control the current flow between the source and drain within the channel, allowing the user to switch a signal on and off with the use of electric fields. This type of transistor is particularly useful for switching on and off quickly, as it does not have to wait for the current to warm up, as bjts do.
The FDB3502 is an N-channel MOSFET and is highly durable, as it has a specific small-signal resistance of 1.5 mohms, which is much lower than that of other similar devices. The FDB3502 also has a wide voltage range of 8 to 40 V and a drain-source resistance of 35 mohms. This gives it a strong electric field effect, making it extremely useful for switching low-level signals. It is also capable of withstanding high temperatures, power losses, and excess electric fields, making it highly durable.
The FDB3502 is useful for a variety of applications, particularly those involving signal switching. It is highly durable and can withstand high temperatures, making it ideal for many different types of applications. It has a low electrical resistance and can switch low-level signals efficiently and accurately. By employing the FDB3502, users can ensure that their signals are properly and efficiently switched and amplified, making it an invaluable asset.
The specific data is subject to PDF, and the above content is for reference
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FDB3502 Datasheet/PDF